AS9120B, ISO 9001:2015, and FAA AC 0056B Accredited
| Item Name | Semiconductor Device Diode |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
| National Item Identification Number (NIIN) | 00-006-9053 (000069053) |
| NCB Code | USA (00) |
| Manufacturer | Bae Systems Inc, Tektronix Gmbh, Lacon Electronic Gmbh, Nimikkeistokeskus Ncb Finland, Adelco Elektronik Gmbh, Thales Defense And Security Inc, Micro Uspd Inc, Military Specifications, Semtech Corporation, Raytheon Company, Trw Electronic Components, Joint Electron Device Engineering |
| Part Number | Manufacturer | Item Name | RFQ |
|---|---|---|---|
| 196011P134 | bae systems inc | semiconductor device diode | RFQ |
| 152-0264-00 | tektronix gmbh | semiconductor device diode | RFQ |
| JANTX1N4976 | lacon electronic gmbh | semiconductor device diode | RFQ |
| 10404009 | nimikkeistokeskus ncb finland | semiconductor device diode | RFQ |
| JANTX1N4976A | adelco elektronik gmbh | semiconductor device diode | RFQ |
| 848205-0023 | thales defense and security inc | semiconductor device diode | RFQ |
| UZ756 | micro uspd inc | semiconductor device diode | RFQ |
| JAN1N4976 | military specifications | semiconductor device diode | RFQ |
| SS4533 | semtech corporation | semiconductor device diode | RFQ |
| UZ9299-23 | micro uspd inc | semiconductor device diode | RFQ |
| 405630-4 | raytheon company | semiconductor device diode | RFQ |
| 925115-23B | raytheon company | semiconductor device diode | RFQ |
| DSZ2063 | trw electronic components | semiconductor device diode | RFQ |
| JANTX1N4976 | military specifications | semiconductor device diode | RFQ |
| JANTX1N4976 | adelco elektronik gmbh | semiconductor device diode | RFQ |
| MIL-PRF-19500/356 | military specifications | semiconductor device diode | RFQ |
| 1N4976 | joint electron device engineering | semiconductor device diode | RFQ |
| MIL-S-19500/356 | military specifications | semiconductor device diode | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ABHP | OVERALL LENGTH | 0.140 INCHES MINIMUM AND 0.300 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 0.900 INCHES MINIMUM AND 1.500 INCHES MAXIMUM |
| ADAV | OVERALL DIAMETER | 0.090 INCHES MINIMUM AND 0.145 INCHES MAXIMUM |
| AFZC | FUNCTION FOR WHICH DESIGNED | ZENER DIODE |
| AXGY | MOUNTING METHOD | TERMINAL |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 56.0 NOMINAL NOMINAL REGULATOR VOLTAGE |
| CTQS | VOLTAGE TOLERANCE IN PERCENT | -5.0 TO 5.0 |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 84.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION |
| CTRD | POWER RATING PER CHARACTERISTIC | 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS AMBIENT AIR |
| MATT | MATERIAL | GLASS INCLOSURE |
| MATT | MATERIAL | SILICON SEMICONDUCTOR |
| TEST | TEST DATA DOCUMENT | 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLECTI |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-S-19500/356 GOVERNMENT SPECIFICATION |
| Relevant Components for NSN - 5961-00-006-9053, 5961000069053 | ||||
| 5930-01-024-7616 (5930010247616) | 5935-01-207-1630 (5935012071630) | 5930-00-522-3346 (5930005223346) | 5985-01-615-6045 (5985016156045) | |
| 5910-00-805-1017 (5910008051017) | 5962-01-297-8133 (5962012978133) | 5935-01-108-9409 (5935011089409) | 5910-01-082-8261 (5910010828261) | |
| 5930-01-681-7491 (5930016817491) | 5930-01-322-8532 (5930013228532) | 5935-00-755-3452 (5935007553452) | 5985-01-676-2667 (5985016762667) | |
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