AS9120B, ISO 9001:2015, and FAA AC 0056B Accredited
| Item Name | Semiconductor Device Diode |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
| National Item Identification Number (NIIN) | 00-437-6393 (004376393) |
| NCB Code | USA (00) |
| Manufacturer | Rockwell Collins Aerospace, Adelco Elektronik Gmbh, Telcom Semiconductor Inc, Freescale Semiconductor Inc, Burns Aerospace Corp, Motorola Communications Group Parts, Interstate Electronics Corporation, Lacon Electronic Gmbh, C O D I Corp, Electronic Industries Inc, Microsemi Corporation, International Diode Corp, Raytheon Company, General Semiconductor Inc, Infineon Technologies |
| Part Number | Manufacturer | Item Name | RFQ |
|---|---|---|---|
| 353-3713-100 | rockwell collins aerospace | semiconductor device diode | RFQ |
| 1N5230B | adelco elektronik gmbh | semiconductor device diode | RFQ |
| 1N5230B | telcom semiconductor inc | semiconductor device diode | RFQ |
| 1N5230B | freescale semiconductor inc | semiconductor device diode | RFQ |
| 1N5230B | burns aerospace corp | semiconductor device diode | RFQ |
| 48D82256C03 | motorola communications group parts | semiconductor device diode | RFQ |
| P00347350-047 | interstate electronics corporation | semiconductor device diode | RFQ |
| 1N5230B | lacon electronic gmbh | semiconductor device diode | RFQ |
| 1N5230B | c o d i corp | semiconductor device diode | RFQ |
| RELEASE5566 | electronic industries inc | semiconductor device diode | RFQ |
| 1N5230B | microsemi corporation | semiconductor device diode | RFQ |
| 1N5230B | international diode corp | semiconductor device diode | RFQ |
| 588101-6 | raytheon company | semiconductor device diode | RFQ |
| 1N5230BA | adelco elektronik gmbh | semiconductor device diode | RFQ |
| 1N5230B | general semiconductor inc | semiconductor device diode | RFQ |
| 1N5230B | infineon technologies | semiconductor device diode | RFQ |
| 1N5230B | electronic industries inc | semiconductor device diode | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS AMBIENT AIR |
| MATT | MATERIAL | GLASS INCLOSURE |
| MATT | MATERIAL | SILICON SEMICONDUCTOR |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| ZZZK | SPECIFICATION/STANDARD DATA | 80131-RELEASE5566 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION |
| ABHP | OVERALL LENGTH | 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM |
| ADAV | OVERALL DIAMETER | 0.085 INCHES MINIMUM AND 0.107 INCHES MAXIMUM |
| ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | DA-7 |
| AXGY | MOUNTING METHOD | TERMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 4.7 MAXIMUM NOMINAL REGULATOR VOLTAGE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 20.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT |
| CTRD | POWER RATING PER CHARACTERISTIC | 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION |
| Relevant Components for NSN - 5961-00-437-6393, 5961004376393 | ||||
| 5985-01-360-2114 (5985013602114) | 5950-01-481-1072 (5950014811072) | 5910-01-015-2302 (5910010152302) | 5930-00-578-6955 (5930005786955) | |
| 5975-01-563-7366 (5975015637366) | 5950-01-261-6319 (5950012616319) | 5962-01-133-3642 (5962011333642) | 5915-01-464-8685 (5915014648685) | |
| 5935-00-763-8252 (5935007638252) | 5910-00-833-8207 (5910008338207) | 5905-01-258-4942 (5905012584942) | 5935-00-825-5145 (5935008255145) | |
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