AS9120B, ISO 9001:2015, and FAA AC 0056B Accredited
| Item Name | Semiconductor Device Diode |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
| National Item Identification Number (NIIN) | 00-494-4913 (004944913) |
| NCB Code | USA (00) |
| Manufacturer | L 3 Communications Corporation, Raytheon Company, Sundstrand International Corporation, Adelco Elektronik Gmbh, Astronautics Corporation, Infineon Technologies, Northrop Grumman Systems Corporation, Hamilton Sundstrand Corporation, Military Specifications, Shugart Corp, Semicon Components Inc, General Electric Company, Rockwell Collins Aerospace, Hughes Corporation, Diodes Inc, Dynalec Corporation, Syntegra Usa Inc, Edo Corporation, Boeing Company The, Control Data Systems Inc, Bae Systems Inc, Inspektorat Wsparcia Sil Zbrojnych |
| Part Number | Manufacturer | Item Name | RFQ |
|---|---|---|---|
| 025-3-07-023 | l 3 communications corporation | semiconductor device diode | RFQ |
| 538139-11 | raytheon company | semiconductor device diode | RFQ |
| 932A737-1 | sundstrand international corporation | semiconductor device diode | RFQ |
| 1N1342 | l 3 communications corporation | semiconductor device diode | RFQ |
| JANTX1N1202AA | adelco elektronik gmbh | semiconductor device diode | RFQ |
| 925237-1B | raytheon company | semiconductor device diode | RFQ |
| 200430-119 | astronautics corporation | semiconductor device diode | RFQ |
| 80-0910 | infineon technologies | semiconductor device diode | RFQ |
| 407B | northrop grumman systems corporation | semiconductor device diode | RFQ |
| 932A737-1 | hamilton sundstrand corporation | semiconductor device diode | RFQ |
| TX1N1202A | military specifications | semiconductor device diode | RFQ |
| JAN1N1202A | military specifications | semiconductor device diode | RFQ |
| 48-00063-001 | shugart corp | semiconductor device diode | RFQ |
| S10305 | semicon components inc | semiconductor device diode | RFQ |
| A27B3R298G | general electric company | semiconductor device diode | RFQ |
| JANTX1N1202 | military specifications | semiconductor device diode | RFQ |
| 353-9009-621 | rockwell collins aerospace | semiconductor device diode | RFQ |
| 088-01-13420 | l 3 communications corporation | semiconductor device diode | RFQ |
| 088-49-00001 | l 3 communications corporation | semiconductor device diode | RFQ |
| TX1N1202 | military specifications | semiconductor device diode | RFQ |
| MIL-PRF-19500/260 | military specifications | semiconductor device diode | RFQ |
| G-765 | l 3 communications corporation | semiconductor device diode | RFQ |
| 368A | hughes corporation | semiconductor device diode | RFQ |
| NSR4118 | diodes inc | semiconductor device diode | RFQ |
| JANTX1N1202A | military specifications | semiconductor device diode | RFQ |
| 368A | northrop grumman systems corporation | semiconductor device diode | RFQ |
| 16101-054 | dynalec corporation | semiconductor device diode | RFQ |
| 95642602 | syntegra usa inc | semiconductor device diode | RFQ |
| 395523-1 | edo corporation | semiconductor device diode | RFQ |
| 479-0984-001 | boeing company the | semiconductor device diode | RFQ |
| 10-4200 PIECE 51 | l 3 communications corporation | semiconductor device diode | RFQ |
| 95642602 | control data systems inc | semiconductor device diode | RFQ |
| 200458-011 | bae systems inc | semiconductor device diode | RFQ |
| 5961PL0960332 | inspektorat wsparcia sil zbrojnych | semiconductor device diode | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ABHP | OVERALL LENGTH | 0.405 INCHES MAXIMUM |
| AKPV | MOUNTING FACILITY QUANTITY | 1 |
| AXGY | MOUNTING METHOD | THREADED STUD |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CCDG | OVERALL WIDTH ACROSS FLATS | 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM |
| CQJX | NOMINAL THREAD SIZE | 0.190 INCHES |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 200.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE,MAXIMUM PEAK TOTAL VALUE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 240.00 AMPERES MAXIMUM FORWARD CURRENT,DC |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS CASE |
| MATT | MATERIAL | SILICON SEMICONDUCTOR |
| TEST | TEST DATA DOCUMENT | 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLECTI |
| THSD | THREAD SERIES DESIGNATOR | UNF |
| TTQY | TERMINAL TYPE AND QUANTITY | 1 TAB,SOLDER LUG AND 1 THREADED STUD |
| ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-S-19500/260 GOVERNMENT SPECIFICATION |
| Relevant Components for NSN - 5961-00-494-4913, 5961004944913 | ||||
| 5999-01-196-8879 (5999011968879) | 5970-00-488-9670 (5970004889670) | 5945-01-477-0491 (5945014770491) | 5999-01-364-2930 (5999013642930) | |
| 5996-01-452-4386 (5996014524386) | 5945-00-260-1626 (5945002601626) | 5998-01-130-0814 (5998011300814) | 5905-00-557-4486 (5905005574486) | |
| 5935-01-689-9407 (5935016899407) | 5980-01-504-2998 (5980015042998) | 5935-00-644-6464 (5935006446464) | 5995-01-277-3853 (5995012773853) | |
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