AS9120B, ISO 9001:2015, and FAA AC 0056B Accredited
| Item Name | Transistor |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
| National Item Identification Number (NIIN) | 00-504-5134 (005045134) |
| NCB Code | USA (00) |
| Manufacturer | General Semiconductor Inc, Miltope Corporation, Northrop Grumman Systems Corporation, Rockwell Collins Aerospace, Litton Systems Inc, Military Specifications, Freescale Semiconductor Inc, Micro Uspd Inc, Joint Electron Device Engineering |
| Part Number | Manufacturer | Item Name | RFQ |
|---|---|---|---|
| 2N4150 | general semiconductor inc | transistor | RFQ |
| M59-159 | miltope corporation | transistor | RFQ |
| 944468-1500 | northrop grumman systems corporation | transistor | RFQ |
| 352-8011-280 | rockwell collins aerospace | transistor | RFQ |
| 7118838-1 | litton systems inc | transistor | RFQ |
| JANTX2N4150-1 | military specifications | transistor | RFQ |
| MIL-PRF-19500/394 | military specifications | transistor | RFQ |
| JAN2N4150 | military specifications | transistor | RFQ |
| SS2047 | freescale semiconductor inc | transistor | RFQ |
| JANTX2N1450S | military specifications | transistor | RFQ |
| JANTX2N4150 | military specifications | transistor | RFQ |
| MIL-S-19500/394 | military specifications | transistor | RFQ |
| 2N4150 | micro uspd inc | transistor | RFQ |
| 2N4150 | joint electron device engineering | transistor | RFQ |
| JANTX2N4150S | military specifications | transistor | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | METAL |
| ABHP | OVERALL LENGTH | 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 1.500 INCHES MINIMUM AND 1.750 INCHES MAXIMUM |
| ADAV | OVERALL DIAMETER | 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM |
| ALBA | ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
| AXGY | MOUNTING METHOD | TERMINAL |
| AYQS | TERMINAL CIRCLE DIAMETER | 0.200 INCHES NOMINAL |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 70.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 7.0 MAXIMUM EMITTER TO BASE VOLTAGE,STATIC,COLLECTOR OPEN |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 10.00 AMPERES SOURCE CUTOFF CURRENT MAXIMUM |
| CTRD | POWER RATING PER CHARACTERISTIC | 5.0 WATTS SMALL-SIGNAL INPUT POWER,COMMON-COLLECTOR PRESET |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
| TEST | TEST DATA DOCUMENT | 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLECTI |
| TTQY | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-S-19500/394 GOVERNMENT SPECIFICATION |
| Relevant Components for NSN - 5961-00-504-5134, 5961005045134 | ||||
| 5930-01-024-7616 (5930010247616) | 5935-01-207-1630 (5935012071630) | 5930-00-522-3346 (5930005223346) | 5985-01-615-6045 (5985016156045) | |
| 5910-00-805-1017 (5910008051017) | 5962-01-297-8133 (5962012978133) | 5935-01-108-9409 (5935011089409) | 5910-01-082-8261 (5910010828261) | |
| 5930-01-681-7491 (5930016817491) | 5930-01-322-8532 (5930013228532) | 5935-00-755-3452 (5935007553452) | 5985-01-676-2667 (5985016762667) | |
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