AS9120B, ISO 9001:2015, and FAA AC 0056B Accredited
| Item Name | Semiconductor Device Diode |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
| National Item Identification Number (NIIN) | 00-752-5351 (007525351) |
| NCB Code | USA (00) |
| Manufacturer | Military Specifications, Rockwell Collins Aerospace, Texas Instruments Inc, L 3 Communications Corporation, Northrop Grumman Systems Corporation, Picatinny Arsenal, Rca Ltd, General Instrument Corporation, Lockheed Martin Corporation, Joint Army-Navy Specifications, Telcom Semiconductor Inc |
| Part Number | Manufacturer | Item Name | RFQ |
|---|---|---|---|
| JAN1N643 | military specifications | semiconductor device diode | RFQ |
| 353-2857-00 | rockwell collins aerospace | semiconductor device diode | RFQ |
| 1N643 | texas instruments inc | semiconductor device diode | RFQ |
| HD6565 | l 3 communications corporation | semiconductor device diode | RFQ |
| 353-2857-000 | rockwell collins aerospace | semiconductor device diode | RFQ |
| JANIN643 | military specifications | semiconductor device diode | RFQ |
| 579R762H01 | northrop grumman systems corporation | semiconductor device diode | RFQ |
| 10962611 | picatinny arsenal | semiconductor device diode | RFQ |
| 231856 | rca ltd | semiconductor device diode | RFQ |
| DR1672 | general instrument corporation | semiconductor device diode | RFQ |
| MIL-S-19500/256 | military specifications | semiconductor device diode | RFQ |
| 752949 | lockheed martin corporation | semiconductor device diode | RFQ |
| JANIN643 | joint army-navy specifications | semiconductor device diode | RFQ |
| 1N643 | joint army-navy specifications | semiconductor device diode | RFQ |
| JAN1N643 | joint army-navy specifications | semiconductor device diode | RFQ |
| 1N463 | joint army-navy specifications | semiconductor device diode | RFQ |
| CD2653 | telcom semiconductor inc | semiconductor device diode | RFQ |
| JAN1N649 | joint army-navy specifications | semiconductor device diode | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAV | OVERALL DIAMETER | 0.077 INCHES MINIMUM AND 0.130 INCHES MAXIMUM |
| AXGY | MOUNTING METHOD | TERMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 175.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE,MAXIMUM PEAK TOTAL VALUE AND 200.0 MAXIMUM REVERSE VOLTAGE,INSTANTANEOUS |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 40.00 MILLIAMPERES MAXIMUM AVERAGE ON-STATE CURRENT,180 DEGREES CONDUCTION ANGLE,AVERAGE OVER A FULL 60-HZ CYCLE |
| MATT | MATERIAL | SILICON SEMICONDUCTOR |
| ABHP | OVERALL LENGTH | 0.195 INCHES MINIMUM AND 0.300 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS AMBIENT AIR |
| MATT | MATERIAL | GLASS INCLOSURE |
| TEST | TEST DATA DOCUMENT | 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLECTI |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-S-19500/256 GOVERNMENT SPECIFICATION |
| Relevant Components for NSN - 5961-00-752-5351, 5961007525351 | ||||
| 5975-00-900-5000 (5975009005000) | 5915-00-509-2939 (5915005092939) | 5995-01-622-9763 (5995016229763) | 5930-00-188-2156 (5930001882156) | |
| 5998-01-494-7223 (5998014947223) | 5905-01-529-9031 (5905015299031) | 5950-00-519-4719 (5950005194719) | 5998-01-070-9399 (5998010709399) | |
| 5935-01-007-6384 (5935010076384) | 5940-01-609-5218 (5940016095218) | 5998-00-781-1392 (5998007811392) | 5925-01-340-5534 (5925013405534) | |
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