Database of Semiconductor Device Diode Under NSN (5961008405466) 5961-00-840-5466 Parts

Part Number Manufacturer Item Name RFQ
1N55A sylvania electric products inc semiconductor device diode RFQ
C221944-1 raytheon company semiconductor device diode RFQ
353-3293-000 rockwell collins aerospace semiconductor device diode RFQ
353-3293-001 rockwell collins aerospace semiconductor device diode RFQ
5961PL0834955 inspektorat wsparcia sil zbrojnych semiconductor device diode RFQ
528978 raytheon technical services company semiconductor device diode RFQ
941-0401-0802 leonardo spa airborne and space semiconductor device diode RFQ
562265-14 hamilton sundstrand corporation semiconductor device diode RFQ
7200933 sylvania electric products inc semiconductor device diode RFQ
5494922P3 general electric company semiconductor device diode RFQ
2123 raytheon company semiconductor device diode RFQ
457-6012 nimikkeistokeskus ncb finland semiconductor device diode RFQ
5961008405466 eca etablissement central des semiconductor device diode RFQ
1N485B telcom semiconductor inc semiconductor device diode RFQ
16100-002 dynalec corporation semiconductor device diode RFQ
QG01 nautel limited semiconductor device diode RFQ
352250009899 thales nederland bv semiconductor device diode RFQ
MIL-PRF-19500/118 military specifications semiconductor device diode RFQ
JAN1N485B military specifications semiconductor device diode RFQ
F411 nautel maine inc semiconductor device diode RFQ
1N484 military specifications semiconductor device diode RFQ
1N484B rockwell collins aerospace semiconductor device diode RFQ
1N485 general semiconductor inc semiconductor device diode RFQ
5339 And 096041 aai corporation semiconductor device diode RFQ
322-1107P3 raytheon company semiconductor device diode RFQ
4178600-347 raytheon company semiconductor device diode RFQ
941-0401-0802 alenia sistemi difesa spa semiconductor device diode RFQ
HD2123 raytheon company semiconductor device diode RFQ
479-0519-002 boeing company the semiconductor device diode RFQ
VBE890-1N485B thales nederland bv semiconductor device diode RFQ
D00001N485BD1 indra systems inc semiconductor device diode RFQ
5339-096041 aai corporation semiconductor device diode RFQ
4178600-198 raytheon company semiconductor device diode RFQ
1301313-7 honeywell international inc semiconductor device diode RFQ

Technical Characteristics of NSN 5961008405466

MRCCriteriaCharacteristic
ADAVOVERALL DIAMETER0.085 INCHES MINIMUM AND 0.125 INCHES MAXIMUM
CBBLFEATURES PROVIDEDHERMETICALLY SEALED CASE
CTSGMAXIMUM OPERATING TEMP PER MEASUREMENT POINT200.0 DEG CELSIUS AMBIENT AIR
MATTMATERIALGLASS INCLOSURE
MATTMATERIALSILICON SEMICONDUCTOR
TESTTEST DATA DOCUMENT81349-MIL-PRF-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLEC
ZZZKSPECIFICATION/STANDARD DATA81349-MIL-PRF-19500/118 GOVERNMENT SPECIFICATION
ABHPOVERALL LENGTH0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
ABJTTERMINAL LENGTH1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
AXGYMOUNTING METHODTERMINAL
CTQNVOLTAGE RATING IN VOLTS PER CHARACTERISTIC180.0 MAXIMUM REVERSE VOLTAGE,PEAK AND 180.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
CTQXCURRENT RATING PER CHARACTERISTIC650.00 MILLIAMPERES MAXIMUM FORWARD CURRENT,DC AND 2.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
TTQYTERMINAL TYPE AND QUANTITY2 UNINSULATED WIRE LEAD

Relevant Components for NSN - 5961-00-840-5466, 5961008405466
5985-01-083-2891 (5985010832891) 5998-01-077-4262 (5998010774262) 5915-01-341-7047 (5915013417047) 5935-01-390-7789 (5935013907789)
5999-01-596-3085 (5999015963085) 5950-00-938-5286 (5950009385286) 5945-01-328-1508 (5945013281508) 5945-00-225-4045 (5945002254045)
5998-00-408-3100 (5998004083100) 5995-01-096-4535 (5995010964535) 5910-00-113-9884 (5910001139884) 5985-01-547-2844 (5985015472844)

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