AS9120B, ISO 9001:2015, and FAA AC 0056B Accredited
| Item Name | Semiconductor Device Diode |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
| National Item Identification Number (NIIN) | 00-903-2990 (009032990) |
| NCB Code | USA (00) |
| Manufacturer | Electronic Industries Inc, Rockwell Collins Aerospace, Elettronica Gmbh, Adelco Elektronik Gmbh, Epcos Ag, Data General Corp, Military Specifications, Telcom Semiconductor Inc, Bae Systems Inc, Compaq Federal Llc, Lockheed Martin Corporation, Xerox Corporation, Freescale Semiconductor Inc, Tektronix Gmbh, Eca Etablissement Central Des |
| Part Number | Manufacturer | Item Name | RFQ |
|---|---|---|---|
| 1N4372A | electronic industries inc | semiconductor device diode | RFQ |
| 353-3615-010 | rockwell collins aerospace | semiconductor device diode | RFQ |
| 521-024-012 | elettronica gmbh | semiconductor device diode | RFQ |
| JAN1N4372AA | adelco elektronik gmbh | semiconductor device diode | RFQ |
| Q68000-A2887-Z | epcos ag | semiconductor device diode | RFQ |
| 101000090 | data general corp | semiconductor device diode | RFQ |
| MILS19500-127 | military specifications | semiconductor device diode | RFQ |
| JAN1N4372 | military specifications | semiconductor device diode | RFQ |
| 1N4372A | telcom semiconductor inc | semiconductor device diode | RFQ |
| 1N4372A | military specifications | semiconductor device diode | RFQ |
| 7538002P072 | bae systems inc | semiconductor device diode | RFQ |
| 200441-034 | bae systems inc | semiconductor device diode | RFQ |
| 11-13295-00 | compaq federal llc | semiconductor device diode | RFQ |
| JAN1N4372A | military specifications | semiconductor device diode | RFQ |
| 237603 | lockheed martin corporation | semiconductor device diode | RFQ |
| 10102 | xerox corporation | semiconductor device diode | RFQ |
| 1N4372A | freescale semiconductor inc | semiconductor device diode | RFQ |
| 152-0278-00 | tektronix gmbh | semiconductor device diode | RFQ |
| 5961009032990 | eca etablissement central des | semiconductor device diode | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ABHP | OVERALL LENGTH | 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM |
| ADAV | OVERALL DIAMETER | 0.085 INCHES MINIMUM AND 0.130 INCHES MAXIMUM |
| AXGY | MOUNTING METHOD | TERMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 3.0 MAXIMUM NOMINAL REGULATOR VOLTAGE AND 1.0 MAXIMUM REVERSE VOLTAGE,INSTANTANEOUS |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 20.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT |
| CTRD | POWER RATING PER CHARACTERISTIC | 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS AMBIENT AIR |
| MATT | MATERIAL | GLASS INCLOSURE |
| MATT | MATERIAL | SILICON SEMICONDUCTOR |
| TEST | TEST DATA DOCUMENT | 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLECTI |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-S-19500/127 GOVERNMENT SPECIFICATION |
| Relevant Components for NSN - 5961-00-903-2990, 5961009032990 | ||||
| 5999-01-196-8879 (5999011968879) | 5970-00-488-9670 (5970004889670) | 5945-01-477-0491 (5945014770491) | 5999-01-364-2930 (5999013642930) | |
| 5996-01-452-4386 (5996014524386) | 5945-00-260-1626 (5945002601626) | 5998-01-130-0814 (5998011300814) | 5905-00-557-4486 (5905005574486) | |
| 5935-01-689-9407 (5935016899407) | 5980-01-504-2998 (5980015042998) | 5935-00-644-6464 (5935006446464) | 5995-01-277-3853 (5995012773853) | |
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