AS9120B, ISO 9001:2015, and FAA AC 0056B Accredited
| Part Number | Manufacturer | Item Name | RFQ |
|---|---|---|---|
| 1N1342B | electronic industries inc | semiconductor device diode | RFQ |
| 4914368-03 | unisys ltd | semiconductor device diode | RFQ |
| 4020003 | telephone systems communications | semiconductor device diode | RFQ |
| 148-0063-001 | shugart corp | semiconductor device diode | RFQ |
| 587393-1 | raytheon company | semiconductor device diode | RFQ |
| 1N1200A | rca ltd | semiconductor device diode | RFQ |
| S2110 | fmc technologies inc | semiconductor device diode | RFQ |
| 182998 | fluke corporation | semiconductor device diode | RFQ |
| 1N1202 | joint electron device engineering | semiconductor device diode | RFQ |
| 1N1200A | powerex inc | semiconductor device diode | RFQ |
| 2813-133 | reliance comm tec corp | semiconductor device diode | RFQ |
| 353-1227-000 | rockwell collins aerospace | semiconductor device diode | RFQ |
| 1N1201A | general electric company | semiconductor device diode | RFQ |
| 1N1199A | freescale semiconductor inc | semiconductor device diode | RFQ |
| 1081H02H56 | northrop grumman systems corporation | semiconductor device diode | RFQ |
| 5961PL0675102 | inspektorat wsparcia sil zbrojnych | semiconductor device diode | RFQ |
| HS179-1N1200 | hydro aire inc | semiconductor device diode | RFQ |
| 353-1721-000 | rockwell collins aerospace | semiconductor device diode | RFQ |
| 308-000-51 | tri source inc | semiconductor device diode | RFQ |
| 136A914G01 | treadwell corporation | semiconductor device diode | RFQ |
| 352250008698 | thales nederland bv | semiconductor device diode | RFQ |
| 3688 | westinghouse electric corp | semiconductor device diode | RFQ |
| JAN1N1202A | texas instruments inc | semiconductor device diode | RFQ |
| 1N1200A | raytheon company | semiconductor device diode | RFQ |
| 404B | westinghouse electric corp | semiconductor device diode | RFQ |
| 1N1200 | freescale semiconductor inc | semiconductor device diode | RFQ |
| 5910009350138 | eca etablissement central des | semiconductor device diode | RFQ |
| JAN1N1202A | military specifications | semiconductor device diode | RFQ |
| B12F20 | infineon technologies | semiconductor device diode | RFQ |
| 1902-0002 | hewlett-packard company | semiconductor device diode | RFQ |
| 1080H37H18 | northrop grumman systems corporation | semiconductor device diode | RFQ |
| 848036-0001 | thales defense and security inc | semiconductor device diode | RFQ |
| JAN1N1200 | military specifications | semiconductor device diode | RFQ |
| 1N1342B | l 3 communications corporation | semiconductor device diode | RFQ |
| 1N1202 | rca ltd | semiconductor device diode | RFQ |
| 1N1200A | texas instruments inc | semiconductor device diode | RFQ |
| 1N1344A | westinghouse electric corp | semiconductor device diode | RFQ |
| 232-1169P1 | raytheon company | semiconductor device diode | RFQ |
| 343-214-010 | interstate electronics corporation | semiconductor device diode | RFQ |
| 1N1342B | raytheon company | semiconductor device diode | RFQ |
| 102884 | systron donner corp | semiconductor device diode | RFQ |
| RELEASE4021 | electronic industries inc | semiconductor device diode | RFQ |
| ST220P | st semicon inc | semiconductor device diode | RFQ |
| 10-1933ITEM17 | l 3 communications corporation | semiconductor device diode | RFQ |
| 1N1202A | solitron devices inc | semiconductor device diode | RFQ |
| 4178600-069 | raytheon company | semiconductor device diode | RFQ |
| 283741 | essex industries inc | semiconductor device diode | RFQ |
| 538139-1 | raytheon company | semiconductor device diode | RFQ |
| 231050057 | dare electronics inc | semiconductor device diode | RFQ |
| 882262 | nai technologies inc | semiconductor device diode | RFQ |
| MIL-S-19500/260 | military specifications | semiconductor device diode | RFQ |
| 1N1202A | kongsberg automotive as | semiconductor device diode | RFQ |
| 5961009350138 | eca etablissement central des | semiconductor device diode | RFQ |
| 1N1202A | military specifications | semiconductor device diode | RFQ |
| 93-0518 | eltek energy llc | semiconductor device diode | RFQ |
| 1N1200 | solitron devices inc | semiconductor device diode | RFQ |
| 871601 | picatinny arsenal | semiconductor device diode | RFQ |
| 1N1341A | electronic industries inc | semiconductor device diode | RFQ |
| 1N1202A | lockheed martin corporation | semiconductor device diode | RFQ |
| 26-173-2 | raytheon company | semiconductor device diode | RFQ |
| 1N1200A | international rectifier corporation | semiconductor device diode | RFQ |
| USAF1N1200 | westinghouse electric corp | semiconductor device diode | RFQ |
| 1N1202A | rca ltd | semiconductor device diode | RFQ |
| 720660-41 | raytheon company | semiconductor device diode | RFQ |
| 908293-00 | lockheed martin corporation | semiconductor device diode | RFQ |
| 1N1342 | freescale semiconductor inc | semiconductor device diode | RFQ |
| JAN1N1202 | military specifications | semiconductor device diode | RFQ |
| 1N1200A | semicon components inc | semiconductor device diode | RFQ |
| 457-6018 | nimikkeistokeskus ncb finland | semiconductor device diode | RFQ |
| 1N1202A | motorola inc | semiconductor device diode | RFQ |
| 451606 | l 3 communications corporation | semiconductor device diode | RFQ |
| 562266-32 | hamilton sundstrand corporation | semiconductor device diode | RFQ |
| FBL00-025 | veeco instruments inc | semiconductor device diode | RFQ |
| 368B | hughes corporation | semiconductor device diode | RFQ |
| 376-00066 | datron the instruments inc | semiconductor device diode | RFQ |
| 16101-009 | dynalec corporation | semiconductor device diode | RFQ |
| 4178600-432 | raytheon company | semiconductor device diode | RFQ |
| 1N1200 | meyers precision manufacturing inc | semiconductor device diode | RFQ |
| 3371405 | itt telecom products corp | semiconductor device diode | RFQ |
| 353-1227-000 | boeing aerostructures australia pty ltd | semiconductor device diode | RFQ |
| 353-3163-011 | rockwell collins aerospace | semiconductor device diode | RFQ |
| 1N1342 | general instrument corporation | semiconductor device diode | RFQ |
| 1885739 ITEM 27 | northrop grumman systems corporation | semiconductor device diode | RFQ |
| JAN1N1202A | microsemi corporation | semiconductor device diode | RFQ |
| 15A3768-2 | eaton aerospace ltd | semiconductor device diode | RFQ |
| A25BX108 | general electric company | semiconductor device diode | RFQ |
| MIL-PRF-19500/260 | military specifications | semiconductor device diode | RFQ |
| 59619350138 | eca etablissement central des | semiconductor device diode | RFQ |
| 1N1342A | harris corporation | semiconductor device diode | RFQ |
| 1N1200 | general electric company | semiconductor device diode | RFQ |
| 267-00-19561-0 | sola basic industries inc | semiconductor device diode | RFQ |
| IN1341 | electronic industries inc | semiconductor device diode | RFQ |
| 55-0059-1 | grimes aerospace company | semiconductor device diode | RFQ |
| 2006-8904 | lockheed martin corporation | semiconductor device diode | RFQ |
| S2110 | fmc of canada ltd | semiconductor device diode | RFQ |
| 653-517-9002 | honeywell international inc | semiconductor device diode | RFQ |
| 418097-4 | raytheon company | semiconductor device diode | RFQ |
| 1N2492 | gilbert engineering co inc | semiconductor device diode | RFQ |
| 2503800-201 | honeywell international inc | semiconductor device diode | RFQ |
| 1N1200A | general electric company | semiconductor device diode | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ABHP | OVERALL LENGTH | 1.253 INCHES MAXIMUM |
| AKPV | MOUNTING FACILITY QUANTITY | 1 |
| ALBA | ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | CATHODE |
| AXGY | MOUNTING METHOD | THREADED STUD |
| CCDG | OVERALL WIDTH ACROSS FLATS | 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM |
| CQJX | NOMINAL THREAD SIZE | 0.190 INCHES |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 240.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE AND 200.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 240.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT AND 12.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
| MATT | MATERIAL | SILICON SEMICONDUCTOR |
| TEST | TEST DATA DOCUMENT | 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLECTI |
| THSD | THREAD SERIES DESIGNATOR | UNF |
| TTQY | TERMINAL TYPE AND QUANTITY | 1 TAB,SOLDER LUG AND 1 THREADED STUD |
| ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-S-19500/260 GOVERNMENT SPECIFICATION |
| Relevant Components for NSN - 5961-00-935-0138, 5961009350138 | ||||
| 5985-01-083-2891 (5985010832891) | 5998-01-077-4262 (5998010774262) | 5915-01-341-7047 (5915013417047) | 5935-01-390-7789 (5935013907789) | |
| 5999-01-596-3085 (5999015963085) | 5950-00-938-5286 (5950009385286) | 5945-01-328-1508 (5945013281508) | 5945-00-225-4045 (5945002254045) | |
| 5998-00-408-3100 (5998004083100) | 5995-01-096-4535 (5995010964535) | 5910-00-113-9884 (5910001139884) | 5985-01-547-2844 (5985015472844) | |
If You’re Ever Looking for NSN parts Or Have an Aircraft On Ground Situation, Don’t forget That We offer Competitive Pricing and Guaranteed On-Time Delivery.
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