Item Name | Semiconductor Device Diode |
Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
National Item Identification Number (NIIN) | 01-017-0390 (010170390) |
NCB Code | USA (01) |
Manufacturer | Advanced Micro Devices Inc, Teledyne Controls Llc, Thales Sa, Veeco Instruments Inc, Electronic Industries Inc, Military Specifications, Nokia Solutions And Networks Gmbh, Honeywell International Inc, Freescale Semiconductor Inc, Micro Quality Semiconductor Inc, Central Semiconductor Corp, Joint Electron Device Engineering |
Part Number | Manufacturer | Item Name | RFQ |
---|---|---|---|
1N5817 | advanced micro devices inc | semiconductor device diode | RFQ |
853297 | teledyne controls llc | semiconductor device diode | RFQ |
99090488 | thales sa | semiconductor device diode | RFQ |
FBL-00-121 | veeco instruments inc | semiconductor device diode | RFQ |
1N5817 | electronic industries inc | semiconductor device diode | RFQ |
1N5817 | military specifications | semiconductor device diode | RFQ |
V22916-X1-A146 | nokia solutions and networks gmbh | semiconductor device diode | RFQ |
007-6088-00 | honeywell international inc | semiconductor device diode | RFQ |
1N5817 TAPE | honeywell international inc | semiconductor device diode | RFQ |
1N5817 | freescale semiconductor inc | semiconductor device diode | RFQ |
VSK120 | micro quality semiconductor inc | semiconductor device diode | RFQ |
IN5817 | freescale semiconductor inc | semiconductor device diode | RFQ |
RELEASE 6425 | electronic industries inc | semiconductor device diode | RFQ |
1N5817 | central semiconductor corp | semiconductor device diode | RFQ |
1N5817 | joint electron device engineering | semiconductor device diode | RFQ |
MRC | Criteria | Characteristic |
---|---|---|
ABHP | OVERALL LENGTH | 0.182 INCHES NOMINAL |
ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM |
ADAV | OVERALL DIAMETER | 0.094 INCHES NOMINAL |
AFZC | FUNCTION FOR WHICH DESIGNED | RECTIFIER |
ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | DO-41 |
AXGY | MOUNTING METHOD | TERMINAL |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 20.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE,MAXIMUM PEAK TOTAL VALUE |
CTQX | CURRENT RATING PER CHARACTERISTIC | 1.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE |
CTRD | POWER RATING PER CHARACTERISTIC | 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION |
CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS AMBIENT AIR |
MATT | MATERIAL | GLASS INCLOSURE |
MATT | MATERIAL | SILICON SEMICONDUCTOR |
TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
Relevant Components for NSN - 5961-01-017-0390, 5961010170390 | ||||
5930-01-024-7616 (5930010247616) | 5935-01-207-1630 (5935012071630) | 5930-00-522-3346 (5930005223346) | 5985-01-615-6045 (5985016156045) | |
5910-00-805-1017 (5910008051017) | 5962-01-297-8133 (5962012978133) | 5935-01-108-9409 (5935011089409) | 5910-01-082-8261 (5910010828261) | |
5930-01-681-7491 (5930016817491) | 5930-01-322-8532 (5930013228532) | 5935-00-755-3452 (5935007553452) | 5985-01-676-2667 (5985016762667) | |
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