AS9120B, ISO 9001:2015, and FAA AC 0056B Accredited
| Item Name | Semiconductor Device Diode |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
| National Item Identification Number (NIIN) | 01-037-4712 (010374712) |
| NCB Code | USA (01) |
| Manufacturer | Northrop Grumman Systems Corporation, Scientific Atlanta Inc, Rockwell Collins Aerospace, Military Specifications, Lockheed Martin Corporation, Nimikkeistokeskus Ncb Finland, Bae Systems Inc, Raytheon Company, Eldec Corporation, Micro Uspd Inc, Mbda Incorporated, Joint Army-Navy Specifications |
| Part Number | Manufacturer | Item Name | RFQ |
|---|---|---|---|
| 944467-8060 | northrop grumman systems corporation | semiconductor device diode | RFQ |
| 163964 | scientific atlanta inc | semiconductor device diode | RFQ |
| 353-9019-410 | rockwell collins aerospace | semiconductor device diode | RFQ |
| JANTX1N5806 | military specifications | semiconductor device diode | RFQ |
| 7906930-10 | lockheed martin corporation | semiconductor device diode | RFQ |
| 10133162 | nimikkeistokeskus ncb finland | semiconductor device diode | RFQ |
| JANTX1N6075 | military specifications | semiconductor device diode | RFQ |
| 231048-706 | bae systems inc | semiconductor device diode | RFQ |
| 808136-2 | raytheon company | semiconductor device diode | RFQ |
| 20-00779-004 | raytheon company | semiconductor device diode | RFQ |
| JAN1N5806 | military specifications | semiconductor device diode | RFQ |
| JANTX1N5806US | military specifications | semiconductor device diode | RFQ |
| CR122-04 | eldec corporation | semiconductor device diode | RFQ |
| 3323-1229-1 | raytheon company | semiconductor device diode | RFQ |
| MIL-PRF-19500/477 | military specifications | semiconductor device diode | RFQ |
| 1N5806JTX | micro uspd inc | semiconductor device diode | RFQ |
| UTR511 | micro uspd inc | semiconductor device diode | RFQ |
| B72159 | mbda incorporated | semiconductor device diode | RFQ |
| JANTX1N5806 | joint army-navy specifications | semiconductor device diode | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ABHP | OVERALL LENGTH | 0.125 INCHES MINIMUM AND 0.250 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 0.700 INCHES MINIMUM AND 1.300 INCHES MAXIMUM |
| ADAV | OVERALL DIAMETER | 0.065 INCHES MINIMUM AND 0.085 INCHES MAXIMUM |
| AXGY | MOUNTING METHOD | TERMINAL |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 160.0 MAXIMUM BREAKDOWN VOLTAGE,DC AND 150.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS AMBIENT AIR |
| MATT | MATERIAL | CERAMIC OR GLASS INCLOSURE |
| MATT | MATERIAL | SILICON SEMICONDUCTOR |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| Relevant Components for NSN - 5961-01-037-4712, 5961010374712 | ||||
| 5910-01-196-2080 (5910011962080) | 5975-01-632-9402 (5975016329402) | 5935-00-415-1980 (5935004151980) | 5950-01-251-0541 (5950012510541) | |
| 5905-00-107-8046 (5905001078046) | 5935-00-021-6899 (5935000216899) | 5930-01-265-7758 (5930012657758) | 5940-01-472-5241 (5940014725241) | |
| 5935-01-419-9395 (5935014199395) | 5905-00-624-7430 (5905006247430) | 5930-00-852-5778 (5930008525778) | 5910-01-049-9143 (5910010499143) | |
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