AS9120B, ISO 9001:2015, and FAA AC 0056B Accredited
| Item Name | Semiconductor Device Diode |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
| National Item Identification Number (NIIN) | 01-053-2794 (010532794) |
| NCB Code | USA (01) |
| Manufacturer | Inspektorat Wsparcia Sil Zbrojnych, Bae Systems Inc, F E L Corp, Leonardo Mw Ltd, Thales Optronics Limited, Vishay Ltd, Nimikkeistokeskus Ncb Finland, Qes Ltd, Military Specifications, Raytheon Company |
| Part Number | Manufacturer | Item Name | RFQ |
|---|---|---|---|
| 5961PL1253570 | inspektorat wsparcia sil zbrojnych | semiconductor device diode | RFQ |
| JAN1N5809 | bae systems inc | semiconductor device diode | RFQ |
| 28473-73011 | bae systems inc | semiconductor device diode | RFQ |
| P565039101 | f e l corp | semiconductor device diode | RFQ |
| 28473-73011 | leonardo mw ltd | semiconductor device diode | RFQ |
| SE25870-048 | thales optronics limited | semiconductor device diode | RFQ |
| UES1302 | vishay ltd | semiconductor device diode | RFQ |
| 10133170 | nimikkeistokeskus ncb finland | semiconductor device diode | RFQ |
| 317124A | qes ltd | semiconductor device diode | RFQ |
| 1N5809 | military specifications | semiconductor device diode | RFQ |
| SE25870-045 | thales optronics limited | semiconductor device diode | RFQ |
| JAN1N5809 | military specifications | semiconductor device diode | RFQ |
| MIL-PRF-19500/477 | military specifications | semiconductor device diode | RFQ |
| VA-70-0154-1 | leonardo mw ltd | semiconductor device diode | RFQ |
| 4178600-882 | raytheon company | semiconductor device diode | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ABHP | OVERALL LENGTH | 0.130 INCHES MINIMUM AND 0.300 INCHES MAXIMUM |
| ADAV | OVERALL DIAMETER | 0.115 INCHES MINIMUM AND 0.165 INCHES MAXIMUM |
| AXGY | MOUNTING METHOD | TERMINAL |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 100.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 125.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS JUNCTION |
| MATT | MATERIAL | GLASS INCLOSURE |
| MATT | MATERIAL | SILICON SEMICONDUCTOR |
| TEST | TEST DATA DOCUMENT | 81349-MIL-PRF-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLEC |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-PRF-19500/477 GOVERNMENT SPECIFICATION |
| Relevant Components for NSN - 5961-01-053-2794, 5961010532794 | ||||
| 5975-00-900-5000 (5975009005000) | 5915-00-509-2939 (5915005092939) | 5995-01-622-9763 (5995016229763) | 5930-00-188-2156 (5930001882156) | |
| 5998-01-494-7223 (5998014947223) | 5905-01-529-9031 (5905015299031) | 5950-00-519-4719 (5950005194719) | 5998-01-070-9399 (5998010709399) | |
| 5935-01-007-6384 (5935010076384) | 5940-01-609-5218 (5940016095218) | 5998-00-781-1392 (5998007811392) | 5925-01-340-5534 (5925013405534) | |
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