AS9120B, ISO 9001:2015, and FAA AC 0056B Accredited
| Item Name | Semiconductor Device Diode |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
| National Item Identification Number (NIIN) | 01-062-2594 (010622594) |
| NCB Code | USA (01) |
| Manufacturer | Raytheon Company, Nimikkeistokeskus Ncb Finland, Military Specifications, Info Lite Corp, Eldec Corporation, Inspektorat Wsparcia Sil Zbrojnych, Northrop Grumman Systems Corporation, Dla Land And Maritime |
| Part Number | Manufacturer | Item Name | RFQ |
|---|---|---|---|
| HDS90037001 | raytheon company | semiconductor device diode | RFQ |
| 10133176 | nimikkeistokeskus ncb finland | semiconductor device diode | RFQ |
| HDS9003 | raytheon company | semiconductor device diode | RFQ |
| MIL-S-19500/337 | military specifications | semiconductor device diode | RFQ |
| 1N4151 | info lite corp | semiconductor device diode | RFQ |
| 37270047-001 | raytheon company | semiconductor device diode | RFQ |
| JANTX1N4153 | military specifications | semiconductor device diode | RFQ |
| CR122-01 | eldec corporation | semiconductor device diode | RFQ |
| 5961PL0916764 | inspektorat wsparcia sil zbrojnych | semiconductor device diode | RFQ |
| TX1N4153 | military specifications | semiconductor device diode | RFQ |
| 947304-1538 | northrop grumman systems corporation | semiconductor device diode | RFQ |
| JANTXV1N4153 | military specifications | semiconductor device diode | RFQ |
| MIL-PRF-19500/337 | military specifications | semiconductor device diode | RFQ |
| L02165 | dla land and maritime | semiconductor device diode | RFQ |
| JANTX1N4153B | military specifications | semiconductor device diode | RFQ |
| JANTX1N4153-1 | military specifications | semiconductor device diode | RFQ |
| 1020G-CS0003 | info lite corp | semiconductor device diode | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ABHP | OVERALL LENGTH | 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM |
| ADAV | OVERALL DIAMETER | 0.056 INCHES MINIMUM AND 0.075 INCHES MAXIMUM |
| AFZC | FUNCTION FOR WHICH DESIGNED | SWITCHING |
| AXGY | MOUNTING METHOD | TERMINAL |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 75.0 MAXIMUM BREAKDOWN VOLTAGE,DC AND 50.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 2.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS AMBIENT AIR |
| MATT | MATERIAL | GLASS INCLOSURE |
| MATT | MATERIAL | SILICON SEMICONDUCTOR |
| TEST | TEST DATA DOCUMENT | 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLECTI |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-S-19500/337 GOVERNMENT SPECIFICATION |
| Relevant Components for NSN - 5961-01-062-2594, 5961010622594 | ||||
| 5985-01-360-2114 (5985013602114) | 5950-01-481-1072 (5950014811072) | 5910-01-015-2302 (5910010152302) | 5930-00-578-6955 (5930005786955) | |
| 5975-01-563-7366 (5975015637366) | 5950-01-261-6319 (5950012616319) | 5962-01-133-3642 (5962011333642) | 5915-01-464-8685 (5915014648685) | |
| 5935-00-763-8252 (5935007638252) | 5910-00-833-8207 (5910008338207) | 5905-01-258-4942 (5905012584942) | 5935-00-825-5145 (5935008255145) | |
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