Item Name | Semiconductor Device Diode |
Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
National Item Identification Number (NIIN) | 01-111-7743 (011117743) |
NCB Code | USA (01) |
Manufacturer | Military Specifications, Joint Army-Navy Specifications, General Dynamics Information Systems, Rockwell Collins Aerospace, Avago Technologies Us Inc, Nimikkeistokeskus Ncb Finland, Hewlett-Packard Company, Worcester Polytechnic Institute, Hamilton Sundstrand Corporation, Microsemi Corporation, L 3 Communications Corporation, Lockheed Martin Corporation, Trw Electronic Components, Power Paragon Inc, Inspektorat Wsparcia Sil Zbrojnych, Freescale Semiconductor Inc, Syntegra Usa Inc, Dynalec Corporation, Ai Tek Instruments Llc, Texas Instruments Inc |
Part Number | Manufacturer | Item Name | RFQ |
---|---|---|---|
JANTX1N752A-1 | military specifications | semiconductor device diode | RFQ |
JANTX1N752A | joint army-navy specifications | semiconductor device diode | RFQ |
15101109 | general dynamics information systems | semiconductor device diode | RFQ |
995-9502-025 | rockwell collins aerospace | semiconductor device diode | RFQ |
MIL-PRF-19500/127 | military specifications | semiconductor device diode | RFQ |
JANTXIN752A | military specifications | semiconductor device diode | RFQ |
1902-1513 | avago technologies us inc | semiconductor device diode | RFQ |
10133215 | nimikkeistokeskus ncb finland | semiconductor device diode | RFQ |
7-70 | hewlett-packard company | semiconductor device diode | RFQ |
JANTX1N752A | worcester polytechnic institute | semiconductor device diode | RFQ |
5E4820 51-1010 | hamilton sundstrand corporation | semiconductor device diode | RFQ |
1N960BRL | microsemi corporation | semiconductor device diode | RFQ |
50240107 | general dynamics information systems | semiconductor device diode | RFQ |
088-99.00199 | l 3 communications corporation | semiconductor device diode | RFQ |
7908415-26 | lockheed martin corporation | semiconductor device diode | RFQ |
1N706A | trw electronic components | semiconductor device diode | RFQ |
62601-7521 | power paragon inc | semiconductor device diode | RFQ |
1902-1513 | hewlett-packard company | semiconductor device diode | RFQ |
JANTX1N752 | military specifications | semiconductor device diode | RFQ |
088-99-00119 | l 3 communications corporation | semiconductor device diode | RFQ |
5961PL0189973 | inspektorat wsparcia sil zbrojnych | semiconductor device diode | RFQ |
JANTX1N752 | joint army-navy specifications | semiconductor device diode | RFQ |
1902-0769 | hewlett-packard company | semiconductor device diode | RFQ |
1N752A | freescale semiconductor inc | semiconductor device diode | RFQ |
15101109 | syntegra usa inc | semiconductor device diode | RFQ |
SZ2187TA2 | freescale semiconductor inc | semiconductor device diode | RFQ |
D370 PIECE CR9 | dynalec corporation | semiconductor device diode | RFQ |
354-121-0006 | ai tek instruments llc | semiconductor device diode | RFQ |
MIL-S-19500/127 | military specifications | semiconductor device diode | RFQ |
1N752A | texas instruments inc | semiconductor device diode | RFQ |
1901-0096 | hewlett-packard company | semiconductor device diode | RFQ |
1902-0769 | avago technologies us inc | semiconductor device diode | RFQ |
MRC | Criteria | Characteristic |
---|---|---|
ABHP | OVERALL LENGTH | 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM |
ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM |
ADAV | OVERALL DIAMETER | 0.055 INCHES MINIMUM AND 0.090 INCHES MAXIMUM |
AFZC | FUNCTION FOR WHICH DESIGNED | VOLTAGE REGULATOR |
AXGY | MOUNTING METHOD | TERMINAL |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 5.6 NOMINAL NOMINAL REGULATOR VOLTAGE |
CTQS | VOLTAGE TOLERANCE IN PERCENT | -5.0 TO 5.0 |
CTQX | CURRENT RATING PER CHARACTERISTIC | 70.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION |
CTRD | POWER RATING PER CHARACTERISTIC | 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION |
CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS AMBIENT AIR |
MATT | MATERIAL | GLASS INCLOSURE |
MATT | MATERIAL | SILICON SEMICONDUCTOR |
TEST | TEST DATA DOCUMENT | 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLECTI |
TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-S-19500/127 GOVERNMENT SPECIFICATION |
Relevant Components for NSN - 5961-01-111-7743, 5961011117743 | ||||
5975-00-900-5000 (5975009005000) | 5915-00-509-2939 (5915005092939) | 5995-01-622-9763 (5995016229763) | 5930-00-188-2156 (5930001882156) | |
5998-01-494-7223 (5998014947223) | 5905-01-529-9031 (5905015299031) | 5950-00-519-4719 (5950005194719) | 5998-01-070-9399 (5998010709399) | |
5935-01-007-6384 (5935010076384) | 5940-01-609-5218 (5940016095218) | 5998-00-781-1392 (5998007811392) | 5925-01-340-5534 (5925013405534) | |
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