Item Name | Semiconductor Device Diode |
Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
National Item Identification Number (NIIN) | 01-210-1785 (012101785) |
NCB Code | USA (01) |
Manufacturer | N A P Smd Technology Inc, International Rectifier Corporation, Microsemi Corporation, Telcom Semiconductor Inc, Hamilton Sundstrand Corporation, Freescale Semiconductor Inc, Sundstrand International Corporation, Semicon Components Inc |
Part Number | Manufacturer | Item Name | RFQ |
---|---|---|---|
G4336 | n a p smd technology inc | semiconductor device diode | RFQ |
69-7404 | international rectifier corporation | semiconductor device diode | RFQ |
DZ721214R | microsemi corporation | semiconductor device diode | RFQ |
CD32473 | telcom semiconductor inc | semiconductor device diode | RFQ |
DZ-1390 | microsemi corporation | semiconductor device diode | RFQ |
938D392-16 | hamilton sundstrand corporation | semiconductor device diode | RFQ |
195-16 | freescale semiconductor inc | semiconductor device diode | RFQ |
938D392-16 | sundstrand international corporation | semiconductor device diode | RFQ |
69-7404 | semicon components inc | semiconductor device diode | RFQ |
MRC | Criteria | Characteristic |
---|---|---|
ABHP | OVERALL LENGTH | 0.300 INCHES MAXIMUM |
ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM |
ADAV | OVERALL DIAMETER | 0.140 INCHES MAXIMUM |
AXGY | MOUNTING METHOD | TERMINAL |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 47.0 NOMINAL NOMINAL REGULATOR VOLTAGE |
CTQS | VOLTAGE TOLERANCE IN PERCENT | -5.0 TO 5.0 |
CTQX | CURRENT RATING PER CHARACTERISTIC | 0.05 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT AND 8.50 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION |
CTRD | POWER RATING PER CHARACTERISTIC | 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION |
CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
FEAT | SPECIAL FEATURES | HARDNESS CRITICAL PROCESS; JUNCTION PATTERN ARRANGEMENT: PN |
MATT | MATERIAL | GLASS INCLOSURE |
MATT | MATERIAL | SILICON SEMICONDUCTOR |
NHCF | NUCLEAR HARDNESS CRITICAL FEATURE | HARDENED |
TEST | TEST DATA DOCUMENT | 00167-938D392 DRAWING (THIS IS THE BASIC GOVERNING DRAWING,SUCH AS A CONTRACTOR DRAWING,ORIGINAL EQUIPMENT MANUFACTURER DRAWING,ETC.; EXCLUDES ANY SPECIFICATION,STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAW |
TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
Relevant Components for NSN - 5961-01-210-1785, 5961012101785 | ||||
5930-01-024-7616 (5930010247616) | 5935-01-207-1630 (5935012071630) | 5930-00-522-3346 (5930005223346) | 5985-01-615-6045 (5985016156045) | |
5910-00-805-1017 (5910008051017) | 5962-01-297-8133 (5962012978133) | 5935-01-108-9409 (5935011089409) | 5910-01-082-8261 (5910010828261) | |
5930-01-681-7491 (5930016817491) | 5930-01-322-8532 (5930013228532) | 5935-00-755-3452 (5935007553452) | 5985-01-676-2667 (5985016762667) | |
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