Database of Transistor Under NSN (5961012218227) 5961-01-221-8227 Parts

Item Name	Transistor
Federal Supply Group (FSG)	Electrical and Electronic Equipment Components
Federal Supply Class (FSC)	5961 Semiconductor Devices and Associated Hardware
National Item Identification Number (NIIN)	01-221-8227 (012218227)
NCB Code	USA (01)
Manufacturer	Raytheon Company, Infineon Technologies, Nimikkeistokeskus Ncb Finland, Ge Aviation Systems Ltd

Part Number	Manufacturer	Item Name	RFQ
04ES053-001	raytheon company	transistor	RFQ
IRFF9120	infineon technologies	transistor	RFQ
10133377	nimikkeistokeskus ncb finland	transistor	RFQ
7110358-001	ge aviation systems ltd	transistor	RFQ

MRC	Criteria	Characteristic
ABBH	INCLOSURE MATERIAL	METAL
ABHP	OVERALL LENGTH	0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
ABJT	TERMINAL LENGTH	0.500 INCHES MINIMUM
ADAV	OVERALL DIAMETER	0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
ALAS	INTERNAL CONFIGURATION	FIELD EFFECT
ALAZ	JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION	TO-39
AXGY	MOUNTING METHOD	TERMINAL
AYQS	TERMINAL CIRCLE DIAMETER	0.205 INCHES MAXIMUM
CTMZ	SEMICONDUCTOR MATERIAL	SILICON
CTQN	VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	-100.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND-100.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE
CTQX	CURRENT RATING PER CHARACTERISTIC	4.00 AMPERES MAXIMUM DRAIN CURRENT AND-16.00 AMPERES MAXIMUM OFF-STATE CURRENT,PEAK
CTRD	POWER RATING PER CHARACTERISTIC	20.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
CTSG	MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	125.0 DEG CELSIUS JUNCTION
TEST	TEST DATA DOCUMENT	24587-04ES053 DRAWING (THIS IS THE BASIC GOVERNING DRAWING,SUCH AS A CONTRACTOR DRAWING,ORIGINAL EQUIPMENT MANUFACTURER DRAWING,ETC.; EXCLUDES ANY SPECIFICATION,STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAW
TTQY	TERMINAL TYPE AND QUANTITY	3 UNINSULATED WIRE LEAD