Item Name | Semiconductor Device Diode |
Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
National Item Identification Number (NIIN) | 01-412-6886 (014126886) |
NCB Code | USA (01) |
Manufacturer | Military Specifications, Raytheon Company, Avago Technologies Us Inc, Interlink Communications Inc, Hewlett-Packard Company, Rockwell Collins Aerospace, Wavetek Rf Products Inc, Joint Army-Navy Specifications, Frequency Electronics Inc, Herley Industries Inc, Lockheed Martin Corporation |
Part Number | Manufacturer | Item Name | RFQ |
---|---|---|---|
MIL-S-19500/444 | military specifications | semiconductor device diode | RFQ |
925974-1B | raytheon company | semiconductor device diode | RFQ |
JANTX1N5711 | military specifications | semiconductor device diode | RFQ |
TX1N5711 | military specifications | semiconductor device diode | RFQ |
1N5711 1N6263 | avago technologies us inc | semiconductor device diode | RFQ |
JANTX5711 | military specifications | semiconductor device diode | RFQ |
40-001020-01 | interlink communications inc | semiconductor device diode | RFQ |
HP5082-2146 | hewlett-packard company | semiconductor device diode | RFQ |
MIL-PRF-19500/444 | military specifications | semiconductor device diode | RFQ |
5082-2800 | avago technologies us inc | semiconductor device diode | RFQ |
JANTX1N5711-1 | military specifications | semiconductor device diode | RFQ |
353-3691-012 | rockwell collins aerospace | semiconductor device diode | RFQ |
4809-02-0001 | wavetek rf products inc | semiconductor device diode | RFQ |
JAN1N5711 | military specifications | semiconductor device diode | RFQ |
1N5711 1N6263 | hewlett-packard company | semiconductor device diode | RFQ |
JANTX1N5711 | joint army-navy specifications | semiconductor device diode | RFQ |
A2S800 | frequency electronics inc | semiconductor device diode | RFQ |
101442-1 | herley industries inc | semiconductor device diode | RFQ |
5082-2800 | hewlett-packard company | semiconductor device diode | RFQ |
7849788P001 | lockheed martin corporation | semiconductor device diode | RFQ |
MRC | Criteria | Characteristic |
---|---|---|
CTQN | Voltage Rating In Volts Per Characteristic | 50.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE |
AXGY | Mounting Method | TERMINAL |
AFZC | Function For Which Designed | SWITCHING |
CTSG | Maximum Operating Temp Per Measurement Point | 150.0 DEG CELSIUS JUNCTION |
CTQX | Current Rating Per Characteristic | 33.00 MILLIAMPERES FORWARD CURRENT, AVERAGE ABSOLUTE |
TEST | Test Data Document | 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTING GENERAL TYPE DATA ON CERTAIN ENVIRONMENTAL AND PERFORMANCE REQUIREMENTS AND TEST CONDITIONS THAT ARE SHOWN AS "TYPICAL", "AVERAGE", "NOMINAL", ETC.). |
ABHP | Overall Length | 0.150 INCHES MINIMUM AND 0.170 INCHES MAXIMUM |
ABBH | Inclosure Material | GLASS |
TTQY | Terminal Type And Quantity | 2 UNINSULATED WIRE LEAD |
ABJT | Terminal Length | 1.000 INCHES MINIMUM |
ADAV | Overall Diameter | 0.068 INCHES MINIMUM AND 0.076 INCHES MAXIMUM |
MRC | Decoded Requirement | Clear Text Reply |
CTMZ | Semiconductor Material | SILICON |
Relevant Components for NSN - 5961-01-412-6886, 5961014126886 | ||||
5975-00-900-5000 (5975009005000) | 5915-00-509-2939 (5915005092939) | 5995-01-622-9763 (5995016229763) | 5930-00-188-2156 (5930001882156) | |
5998-01-494-7223 (5998014947223) | 5905-01-529-9031 (5905015299031) | 5950-00-519-4719 (5950005194719) | 5998-01-070-9399 (5998010709399) | |
5935-01-007-6384 (5935010076384) | 5940-01-609-5218 (5940016095218) | 5998-00-781-1392 (5998007811392) | 5925-01-340-5534 (5925013405534) | |
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