AS9120B, ISO 9001:2015, and FAA AC 0056B Accredited
| Item Name | Microcircuit Memory |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5962 Microcircuits Electronic |
| National Item Identification Number (NIIN) | 00-236-8114 (002368114) |
| NCB Code | USA (00) |
| Manufacturer | Advanced Micro Devices Inc, Philips Semiconductors Ltd, Northrop Grumman Systems Corporation |
| Part Number | Manufacturer | Item Name | RFQ |
|---|---|---|---|
| 920986-1 | advanced micro devices inc | microcircuit memory | RFQ |
| S8285F | philips semiconductors ltd | microcircuit memory | RFQ |
| 920986-1 | philips semiconductors ltd | microcircuit memory | RFQ |
| S8285A | advanced micro devices inc | microcircuit memory | RFQ |
| N8285A | philips semiconductors ltd | microcircuit memory | RFQ |
| 920986-1 | northrop grumman systems corporation | microcircuit memory | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 420.0 MILLIWATTS |
| AFGA | OPERATING TEMP RANGE | -55.0/125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0/150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS AND MEDIUM SPEED AND BIDIRECTIONAL AND FAST CARRY AND W/ENABLE AND ASYNCHRONOUS AND SYNCHRONOUS AND RESETTABLE AND NEGATIVE EDGE TRIGGERED |
| CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 6 INPUT |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -1.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 35.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,LOW TO HIGH LEVEL OUTPUT AND 35.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,HIGH TO LOW LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | ROM |
| TTQY | TERMINAL TYPE AND QUANTITY | 14 PRINTED CIRCUIT |
| Relevant Components for NSN - 5962-00-236-8114, 5962002368114 | ||||
| 5999-01-196-8879 (5999011968879) | 5970-00-488-9670 (5970004889670) | 5945-01-477-0491 (5945014770491) | 5999-01-364-2930 (5999013642930) | |
| 5996-01-452-4386 (5996014524386) | 5945-00-260-1626 (5945002601626) | 5998-01-130-0814 (5998011300814) | 5905-00-557-4486 (5905005574486) | |
| 5935-01-689-9407 (5935016899407) | 5980-01-504-2998 (5980015042998) | 5935-00-644-6464 (5935006446464) | 5995-01-277-3853 (5995012773853) | |
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