AS9120B, ISO 9001:2015, and FAA AC 0056B Accredited
| Item Name | Microcircuit Memory |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5962 Microcircuits Electronic |
| National Item Identification Number (NIIN) | 01-093-6160 (010936160) |
| NCB Code | USA (01) |
| Manufacturer | Philips Semiconductors Ltd, Military Specifications, Lockheed Martin Corporation, National Semiconductor Corporation, Fairchild Semiconductor Corp, Advanced Micro Devices Inc, Dla Land And Maritime, Hamilton Sundstrand Corporation, Intel Corporation, Raytheon Company, International Electric Co, Boeing Company The, Thales Sa |
| Part Number | Manufacturer | Item Name | RFQ |
|---|---|---|---|
| S82S191I 883B | philips semiconductors ltd | microcircuit memory | RFQ |
| 5962-3821002BJA | military specifications | microcircuit memory | RFQ |
| 7908628-06 | lockheed martin corporation | microcircuit memory | RFQ |
| M38510/21002BJX | military specifications | microcircuit memory | RFQ |
| DM77S191J 883B | national semiconductor corporation | microcircuit memory | RFQ |
| R29681ASMB | fairchild semiconductor corp | microcircuit memory | RFQ |
| AM27S191DCB | advanced micro devices inc | microcircuit memory | RFQ |
| ROM PROM HEAD 029 | dla land and maritime | microcircuit memory | RFQ |
| MIL-M-38510/210 | military specifications | microcircuit memory | RFQ |
| 7907566-02 | lockheed martin corporation | microcircuit memory | RFQ |
| R29681SMB | fairchild semiconductor corp | microcircuit memory | RFQ |
| M38510/21002BJB | military specifications | microcircuit memory | RFQ |
| 5E8971 344-0014 | hamilton sundstrand corporation | microcircuit memory | RFQ |
| N82S191N | philips semiconductors ltd | microcircuit memory | RFQ |
| M38510/21002BJA | military specifications | microcircuit memory | RFQ |
| 5962-3821002BJX | military specifications | microcircuit memory | RFQ |
| R29683ASMB | fairchild semiconductor corp | microcircuit memory | RFQ |
| M3636B-1 | intel corporation | microcircuit memory | RFQ |
| HM1-76161-5 | advanced micro devices inc | microcircuit memory | RFQ |
| G134663-2 | raytheon company | microcircuit memory | RFQ |
| MD3636 | international electric co | microcircuit memory | RFQ |
| D3636B1 | intel corporation | microcircuit memory | RFQ |
| 3636B-1 | intel corporation | microcircuit memory | RFQ |
| JAN-M38510/21002BJX | military specifications | microcircuit memory | RFQ |
| 477-1690-001 | boeing company the | microcircuit memory | RFQ |
| AM27S291ADC | advanced micro devices inc | microcircuit memory | RFQ |
| AM27S191APC | advanced micro devices inc | microcircuit memory | RFQ |
| 7909151-06 | lockheed martin corporation | microcircuit memory | RFQ |
| 000-8003-983 | boeing company the | microcircuit memory | RFQ |
| 99116292 | thales sa | microcircuit memory | RFQ |
| JM38510/21002BJX | military specifications | microcircuit memory | RFQ |
| 82S191 | philips semiconductors ltd | microcircuit memory | RFQ |
| 5962-3821002BJB | military specifications | microcircuit memory | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 1.290 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.150 INCHES MINIMUM AND 0.210 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.02 WATTS |
| AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND BIPOLAR AND PROGRAMMABLE AND PROGRAMMED AND SCHOTTKY AND W/BUFFERED OUTPUT |
| CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 14 INPUT |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-3 MIL-M-38510 |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 5.5 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 100.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,LOW TO HIGH LEVEL OUTPUT AND 100.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,HIGH TO LOW LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | ROM |
| CZZZ | MEMORY CAPACITY | UNKNOWN |
| TEST | TEST DATA DOCUMENT | 81349-MIL-M-38510 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLECTI |
| TTQY | TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT |
| ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-M-38510/21 GOVERNMENT SPECIFICATION |
| Relevant Components for NSN - 5962-01-093-6160, 5962010936160 | ||||
| 5930-01-024-7616 (5930010247616) | 5935-01-207-1630 (5935012071630) | 5930-00-522-3346 (5930005223346) | 5985-01-615-6045 (5985016156045) | |
| 5910-00-805-1017 (5910008051017) | 5962-01-297-8133 (5962012978133) | 5935-01-108-9409 (5935011089409) | 5910-01-082-8261 (5910010828261) | |
| 5930-01-681-7491 (5930016817491) | 5930-01-322-8532 (5930013228532) | 5935-00-755-3452 (5935007553452) | 5985-01-676-2667 (5985016762667) | |
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