AS9120B, ISO 9001:2015, and FAA AC 0056B Accredited
| Item Name | Microcircuit Memory |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5962 Microcircuits Electronic |
| National Item Identification Number (NIIN) | 01-112-2727 (011122727) |
| NCB Code | USA (01) |
| Manufacturer | Advanced Micro Devices Inc, Raytheon Company, Dla Land And Maritime, Moog Inc, Sypris Electronics Llc, Synertek, Warner Robins Air Logistics Center, Lockheed Martin Corporation, Bae Systems Information |
| Part Number | Manufacturer | Item Name | RFQ |
|---|---|---|---|
| C2101 1 883B | advanced micro devices inc | microcircuit memory | RFQ |
| 911726-2 | raytheon company | microcircuit memory | RFQ |
| DMS 88016B | dla land and maritime | microcircuit memory | RFQ |
| 129-415-0004-05 | moog inc | microcircuit memory | RFQ |
| AM9101CMB | advanced micro devices inc | microcircuit memory | RFQ |
| AM9101CDMB | advanced micro devices inc | microcircuit memory | RFQ |
| 34031040-001 | sypris electronics llc | microcircuit memory | RFQ |
| SYM2101-1C0253 | synertek | microcircuit memory | RFQ |
| SYMC2101-1-883B | synertek | microcircuit memory | RFQ |
| SYM2101-1C10253 | synertek | microcircuit memory | RFQ |
| 8525287 | warner robins air logistics center | microcircuit memory | RFQ |
| C10736-1 | lockheed martin corporation | microcircuit memory | RFQ |
| 6010445-001 | bae systems information | microcircuit memory | RFQ |
| AM9101C DMC | advanced micro devices inc | microcircuit memory | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 1.060 INCHES MINIMUM AND 1.110 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.380 INCHES MINIMUM AND 0.400 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.180 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
| AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND MONOLITHIC AND LOW POWER AND W/DISABLE |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 15 INPUT |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.0 VOLTS MAXIMUM POWER SOURCE |
| CZER | MEMORY DEVICE TYPE | RAM |
| TEST | TEST DATA DOCUMENT | 81755-C10736 DRAWING (THIS IS THE BASIC GOVERNING DRAWING,SUCH AS A CONTRACTOR DRAWING,ORIGINAL EQUIPMENT MANUFACTURER DRAWING,ETC.; EXCLUDES ANY SPECIFICATION,STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWI |
| TTQY | TERMINAL TYPE AND QUANTITY | 22 PRINTED CIRCUIT |
| Relevant Components for NSN - 5962-01-112-2727, 5962011122727 | ||||
| 5910-01-196-2080 (5910011962080) | 5975-01-632-9402 (5975016329402) | 5935-00-415-1980 (5935004151980) | 5950-01-251-0541 (5950012510541) | |
| 5905-00-107-8046 (5905001078046) | 5935-00-021-6899 (5935000216899) | 5930-01-265-7758 (5930012657758) | 5940-01-472-5241 (5940014725241) | |
| 5935-01-419-9395 (5935014199395) | 5905-00-624-7430 (5905006247430) | 5930-00-852-5778 (5930008525778) | 5910-01-049-9143 (5910010499143) | |
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