HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND 3-STATE OUTPUT AND EXPANDABLE
CQSJ
INCLOSURE MATERIAL
CERAMIC AND GLASS
CQSZ
INCLOSURE CONFIGURATION
DUAL-IN-LINE
CQWX
OUTPUT LOGIC FORM
N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
CQZP
INPUT CIRCUIT PATTERN
10 INPUT
CWSG
TERMINAL SURFACE TREATMENT
SOLDER
CZEN
VOLTAGE RATING AND TYPE PER CHARACTERISTIC
20.0 VOLTS MAXIMUM POWER SOURCE
CZEQ
TIME RATING PER CHACTERISTIC
375.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,LOW TO HIGH LEVEL OUTPUT AND 375.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,HIGH TO LOW LEVEL OUTPUT
CZER
MEMORY DEVICE TYPE
RAM
CZZZ
MEMORY CAPACITY
UNKNOWN
TEST
TEST DATA DOCUMENT
28480-1818-0334 DRAWING (THIS IS THE BASIC GOVERNING DRAWING,SUCH AS A CONTRACTOR DRAWING,ORIGINAL EQUIPMENT MANUFACTURER DRAWING,ETC.; EXCLUDES ANY SPECIFICATION,STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DR
TTQY
TERMINAL TYPE AND QUANTITY
16 PRINTED CIRCUIT
Relevant Components for NSN - 5962-01-146-2105, 5962011462105
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