AS9120B, ISO 9001:2015, and FAA AC 0056B Accredited
| Item Name | Microcircuit Memory |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5962 Microcircuits Electronic |
| National Item Identification Number (NIIN) | 01-152-1822 (011521822) |
| NCB Code | USA (01) |
| Manufacturer | Military Specifications, Pioneer Standard Electronics Inc, Raytheon Company, Lockheed Martin Corporation, Advanced Micro Devices Inc, Hitachi Kokusai Electric America, Intel Corporation |
| Part Number | Manufacturer | Item Name | RFQ |
|---|---|---|---|
| 5962-3823805BVA | military specifications | microcircuit memory | RFQ |
| 5962-3823805BVB | military specifications | microcircuit memory | RFQ |
| JM38510-23805BVA | pioneer standard electronics inc | microcircuit memory | RFQ |
| 1041689-1 | raytheon company | microcircuit memory | RFQ |
| MIL-M-38510/238 | military specifications | microcircuit memory | RFQ |
| 7908848-08 | lockheed martin corporation | microcircuit memory | RFQ |
| 5962-3823805BVX | military specifications | microcircuit memory | RFQ |
| AM2147-55 BVA | advanced micro devices inc | microcircuit memory | RFQ |
| HM6147P3 | hitachi kokusai electric america | microcircuit memory | RFQ |
| 899582-1 | raytheon company | microcircuit memory | RFQ |
| D2147H-3 | intel corporation | microcircuit memory | RFQ |
| M38510/23805BVB | military specifications | microcircuit memory | RFQ |
| M38510/23805BVX | military specifications | microcircuit memory | RFQ |
| M38510/23805BVA | military specifications | microcircuit memory | RFQ |
| MD2147A | intel corporation | microcircuit memory | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 0.960 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.2 WATTS |
| AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND STATIC OPERATION |
| CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | METAL OXIDE-SEMICONDUCTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 15 INPUT |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-6 MIL-M-38510 |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.0 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 100.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,LOW TO HIGH LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | RAM |
| TEST | TEST DATA DOCUMENT | 81349-MIL-M-38510 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLECTI |
| TTQY | TERMINAL TYPE AND QUANTITY | 18 PRINTED CIRCUIT |
| ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-M-38510/238 GOVERNMENT SPECIFICATION |
| Relevant Components for NSN - 5962-01-152-1822, 5962011521822 | ||||
| 5975-00-900-5000 (5975009005000) | 5915-00-509-2939 (5915005092939) | 5995-01-622-9763 (5995016229763) | 5930-00-188-2156 (5930001882156) | |
| 5998-01-494-7223 (5998014947223) | 5905-01-529-9031 (5905015299031) | 5950-00-519-4719 (5950005194719) | 5998-01-070-9399 (5998010709399) | |
| 5935-01-007-6384 (5935010076384) | 5940-01-609-5218 (5940016095218) | 5998-00-781-1392 (5998007811392) | 5925-01-340-5534 (5925013405534) | |
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