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Buy Military Ground Vehicle Parts is a one-stop shop for NSN 5962-01-181-3107 supplies, our selection currently featuring popular part numbers like 351-3656-092, 5962-3850307BRA, 5962-3850307BRX, M38510/50307BRB, DMPAL12L6J 883, and others. With everything featured on our catalog being available for purchase today, do not hesitate to begin exploring options while utilizing provided listing resources to narrow your search. Alongside simplifying the process of locating NSN 5962-01-181-3107 parts of interest, we have also streamlined the quotation process with our online Request for Quote (RFQ) forms. By filling out and submitting a request on our website with information on your needs, our staff will be able to provide you with fully customized purchasing options for your consideration.
We aim to provide the most reliable procurement options for our customers, following a strict sourcing policy that ensures that all NSN 5962-01-181-3107 parts we stock can be traced back to a trusted manufacturer. Furthermore, customers can rest easy knowing that our staff will work closely with them to find options that meet any time constraints or purchasing options, with consultation offered for any expedited delivery requests. With all of this in mind, be sure to get in contact with us at any time if you have any inquiries or purchasing requests!
| Item Name | Microcircuit Memory |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5962 Microcircuits Electronic |
| National Item Identification Number (NIIN) | 01-181-3107 (011813107) |
| NCB Code | USA (01) |
| Manufacturer | Rockwell Collins Aerospace, Military Specifications, National Semiconductor Corporation, Dla Land And Maritime, Honeywell International Inc, Advanced Micro Devices Inc, Northrop Grumman Systems Corporation, Mmi Amd, Lockheed Martin Corporation |
| Part Number | Manufacturer | Item Name | RFQ |
|---|---|---|---|
| 351-3656-092 | rockwell collins aerospace | microcircuit memory | RFQ |
| 5962-3850307BRA | military specifications | microcircuit memory | RFQ |
| 5962-3850307BRX | military specifications | microcircuit memory | RFQ |
| M38510/50307BRB | military specifications | microcircuit memory | RFQ |
| DMPAL12L6J 883 | national semiconductor corporation | microcircuit memory | RFQ |
| MIL-M-38510/503 | military specifications | microcircuit memory | RFQ |
| 5962-3850307BRB | military specifications | microcircuit memory | RFQ |
| ROM/PROM HEAD 104 | dla land and maritime | microcircuit memory | RFQ |
| 6405548-1 | honeywell international inc | microcircuit memory | RFQ |
| ROM PROM HEAD 103 | dla land and maritime | microcircuit memory | RFQ |
| M38510/50307BRA | military specifications | microcircuit memory | RFQ |
| PAL12L6 | advanced micro devices inc | microcircuit memory | RFQ |
| 644A649H01 | northrop grumman systems corporation | microcircuit memory | RFQ |
| PAL12L6 | mmi amd | microcircuit memory | RFQ |
| 7909914-12 | lockheed martin corporation | microcircuit memory | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 1.060 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.185 INCHES NOMINAL |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 2.0 WATTS |
| AFGA | OPERATING TEMP RANGE | -55.0/125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0/150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND MONOLITHIC AND BIPOLAR |
| CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | BIPOLAR METAL-OXIDE SEMICONDUCTOR |
| CQZP | INPUT CIRCUIT PATTERN | 12 INPUT |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-8 MIL-M-38510 |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 100.00 MILLIAMPERES REVERSE CURRENT,DC NOMINAL |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 5.0 VOLTS NOMINAL POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,LOW TO HIGH LEVEL OUTPUT AND 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,HIGH TO LOW LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | PAL |
| TEST | TEST DATA DOCUMENT | 81349-MIL-M-38510 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLECTI |
| TTQY | TERMINAL TYPE AND QUANTITY | 20 PRINTED CIRCUIT |
| ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-M-38510/503 GOVERNMENT SPECIFICATION |
| Relevant Components for NSN - 5962-01-181-3107, 5962011813107 | ||||
| 5999-01-120-1268 (5999011201268) | 5950-01-328-0356 (5950013280356) | 5998-01-494-3925 (5998014943925) | 5970-01-504-2840 (5970015042840) | |
| 5910-01-067-4892 (5910010674892) | 5999-00-893-0815 (5999008930815) | 5999-01-571-9826 (5999015719826) | 5998-01-314-8631 (5998013148631) | |
| 5930-00-907-6366 (5930009076366) | 5995-01-082-7355 (5995010827355) | 5905-01-024-9108 (5905010249108) | 5965-01-684-9298 (5965016849298) | |
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