Item Name | Microcircuit Memory |
Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
Federal Supply Class (FSC) | 5962 Microcircuits Electronic |
National Item Identification Number (NIIN) | 01-247-5648 (012475648) |
NCB Code | USA (01) |
Manufacturer | Rockwell Collins Aerospace, Dla Land And Maritime, Agh Industries Inc, Nimikkeistokeskus Ncb Finland, St Microelectronics Ltd, Intersil Communications Inc, Integrated Device Technology Inc, Intersil Corporation, Hamilton Sundstrand Corporation, Cypress Semiconductor Inc |
Part Number | Manufacturer | Item Name | RFQ |
---|---|---|---|
258-9000-150 | rockwell collins aerospace | microcircuit memory | RFQ |
8403603JX | dla land and maritime | microcircuit memory | RFQ |
MKB6116LP-83 | agh industries inc | microcircuit memory | RFQ |
10133968 | nimikkeistokeskus ncb finland | microcircuit memory | RFQ |
84036 | dla land and maritime | microcircuit memory | RFQ |
MKB6116LJ-83 | st microelectronics ltd | microcircuit memory | RFQ |
8403603JB | dla land and maritime | microcircuit memory | RFQ |
HM1-65162C 883 | intersil communications inc | microcircuit memory | RFQ |
IDT6116SA120DM | integrated device technology inc | microcircuit memory | RFQ |
HM1-65162C 883 | intersil corporation | microcircuit memory | RFQ |
351-5643-020 | rockwell collins aerospace | microcircuit memory | RFQ |
5R8061-200-0001 | hamilton sundstrand corporation | microcircuit memory | RFQ |
8403603JA | dla land and maritime | microcircuit memory | RFQ |
CS1905AT | cypress semiconductor inc | microcircuit memory | RFQ |
MRC | Criteria | Characteristic |
---|---|---|
ADAQ | BODY LENGTH | 1.290 INCHES MAXIMUM |
ADAT | BODY WIDTH | 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM |
ADAU | BODY HEIGHT | 0.150 INCHES MAXIMUM |
AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
AGAV | END ITEM IDENTIFICATION | 6660-01-153-1269 CLOUD HEIGHT SE |
CBBL | FEATURES PROVIDED | MONOLITHIC AND HERMETICALLY SEALED AND W/ENABLE |
CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS |
CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
CQZP | INPUT CIRCUIT PATTERN | 22 INPUT |
CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-3 MIL-M-38510 |
CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.3 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE |
CZEQ | TIME RATING PER CHACTERISTIC | 120.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,LOW TO HIGH LEVEL OUTPUT AND 120.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,HIGH TO LOW LEVEL OUTPUT |
CZER | MEMORY DEVICE TYPE | RAM |
TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS,INDIVIDUAL MANUFACTUREER STANDARDS,ETC.). |
TTQY | TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT |
Relevant Components for NSN - 5962-01-247-5648, 5962012475648 | ||||
5975-00-900-5000 (5975009005000) | 5915-00-509-2939 (5915005092939) | 5995-01-622-9763 (5995016229763) | 5930-00-188-2156 (5930001882156) | |
5998-01-494-7223 (5998014947223) | 5905-01-529-9031 (5905015299031) | 5950-00-519-4719 (5950005194719) | 5998-01-070-9399 (5998010709399) | |
5935-01-007-6384 (5935010076384) | 5940-01-609-5218 (5940016095218) | 5998-00-781-1392 (5998007811392) | 5925-01-340-5534 (5925013405534) | |
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