Item Name | Microcircuit Memory |
Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
Federal Supply Class (FSC) | 5962 Microcircuits Electronic |
National Item Identification Number (NIIN) | 01-260-8680 (012608680) |
NCB Code | USA (01) |
Manufacturer | Thales Sa, Raytheon Company, Matra Harris Semiconductor, Performance Semiconductor Corp, Dla Land And Maritime, Integrated Device Technology Inc, Nimikkeistokeskus Ncb Finland |
Part Number | Manufacturer | Item Name | RFQ |
---|---|---|---|
99165736 | thales sa | microcircuit memory | RFQ |
72-01398-097 | raytheon company | microcircuit memory | RFQ |
HM1E-65764N 883 | matra harris semiconductor | microcircuit memory | RFQ |
P4C164-55DWMB | performance semiconductor corp | microcircuit memory | RFQ |
5962-3829409MXX | dla land and maritime | microcircuit memory | RFQ |
IDT7164L55DB | integrated device technology inc | microcircuit memory | RFQ |
5962-8552505XB | dla land and maritime | microcircuit memory | RFQ |
8552505XA | dla land and maritime | microcircuit memory | RFQ |
IDT7164S55DB | integrated device technology inc | microcircuit memory | RFQ |
5962-8552505XA | dla land and maritime | microcircuit memory | RFQ |
5962-3829409MXB | dla land and maritime | microcircuit memory | RFQ |
5962-3829409MXA | dla land and maritime | microcircuit memory | RFQ |
5962-8552505XX | dla land and maritime | microcircuit memory | RFQ |
415-2454 | nimikkeistokeskus ncb finland | microcircuit memory | RFQ |
5962-38294 | dla land and maritime | microcircuit memory | RFQ |
5962-85525 | dla land and maritime | microcircuit memory | RFQ |
MRC | Criteria | Characteristic |
---|---|---|
ADAQ | BODY LENGTH | 1.490 INCHES MAXIMUM |
ADAT | BODY WIDTH | 0.610 INCHES MAXIMUM |
ADAU | BODY HEIGHT | 0.232 INCHES MAXIMUM |
AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
CBBL | FEATURES PROVIDED | BURN IN AND ELECTROSTATIC SENSITIVE AND MONOLITHIC AND PROGRAMMED |
CQSJ | INCLOSURE MATERIAL | CERAMIC |
CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
CQZP | INPUT CIRCUIT PATTERN | 21 INPUT |
CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-10 MIL-M-38510 |
CTQX | CURRENT RATING PER CHARACTERISTIC | 125.00 MILLIAMPERES MAXIMUM SUPPLY |
CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -3.0 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE |
CZER | MEMORY DEVICE TYPE | RAM |
TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS,INDIVIDUAL MANUFACTUREER STANDARDS,ETC.). |
TTQY | TERMINAL TYPE AND QUANTITY | 28 PRINTED CIRCUIT |
Relevant Components for NSN - 5962-01-260-8680, 5962012608680 | ||||
5910-01-196-2080 (5910011962080) | 5975-01-632-9402 (5975016329402) | 5935-00-415-1980 (5935004151980) | 5950-01-251-0541 (5950012510541) | |
5905-00-107-8046 (5905001078046) | 5935-00-021-6899 (5935000216899) | 5930-01-265-7758 (5930012657758) | 5940-01-472-5241 (5940014725241) | |
5935-01-419-9395 (5935014199395) | 5905-00-624-7430 (5905006247430) | 5930-00-852-5778 (5930008525778) | 5910-01-049-9143 (5910010499143) | |
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