AS9120B, ISO 9001:2015, and FAA AC 0056B Accredited
| Item Name | Microcircuit Memory |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5962 Microcircuits Electronic |
| National Item Identification Number (NIIN) | 01-262-0193 (012620193) |
| NCB Code | USA (01) |
| Manufacturer | Dla Land And Maritime, Raytheon Technical Services Company, Lockheed Martin Corporation, Fujitsu America Inc, Advanced Micro Devices Inc, Raytheon Company, Msis Semiconductor Inc |
| Part Number | Manufacturer | Item Name | RFQ |
|---|---|---|---|
| 5962-8608101BRX | dla land and maritime | microcircuit memory | RFQ |
| 5962-8608101BRA | dla land and maritime | microcircuit memory | RFQ |
| 5962-8608101RA | dla land and maritime | microcircuit memory | RFQ |
| A984-1 | raytheon technical services company | microcircuit memory | RFQ |
| 7546405P502 | lockheed martin corporation | microcircuit memory | RFQ |
| 5962-8608101RX | dla land and maritime | microcircuit memory | RFQ |
| MB8168-55 | fujitsu america inc | microcircuit memory | RFQ |
| 5962-8608101BRB | dla land and maritime | microcircuit memory | RFQ |
| AM2168-55 BRA | advanced micro devices inc | microcircuit memory | RFQ |
| 5962-86081 | dla land and maritime | microcircuit memory | RFQ |
| 5962-8608101RB | dla land and maritime | microcircuit memory | RFQ |
| 717367-61 | raytheon company | microcircuit memory | RFQ |
| AM2168-55-BRA | msis semiconductor inc | microcircuit memory | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 1.060 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.310 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.185 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.2 WATTS |
| AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | MONOLITHIC AND STATIC OPERATION |
| CQSJ | INCLOSURE MATERIAL | METAL OR CERAMIC OR PLASTIC |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 20 INPUT |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-8 MIL-M-38510 |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.0 VOLTS MAXIMUM POWER SOURCE |
| CZER | MEMORY DEVICE TYPE | RAM |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS,INDIVIDUAL MANUFACTUREER STANDARDS,ETC.). |
| TTQY | TERMINAL TYPE AND QUANTITY | 20 PRINTED CIRCUIT |
| Relevant Components for NSN - 5962-01-262-0193, 5962012620193 | ||||
| 5975-00-900-5000 (5975009005000) | 5915-00-509-2939 (5915005092939) | 5995-01-622-9763 (5995016229763) | 5930-00-188-2156 (5930001882156) | |
| 5998-01-494-7223 (5998014947223) | 5905-01-529-9031 (5905015299031) | 5950-00-519-4719 (5950005194719) | 5998-01-070-9399 (5998010709399) | |
| 5935-01-007-6384 (5935010076384) | 5940-01-609-5218 (5940016095218) | 5998-00-781-1392 (5998007811392) | 5925-01-340-5534 (5925013405534) | |
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