AS9120B, ISO 9001:2015, and FAA AC 0056B Accredited
| Item Name | Microcircuit Memory |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5962 Microcircuits Electronic |
| National Item Identification Number (NIIN) | 01-264-2990 (012642990) |
| NCB Code | USA (01) |
| Manufacturer | Military Specifications, Advanced Micro Devices Inc, St Microelectronics Ltd |
| Part Number | Manufacturer | Item Name | RFQ |
|---|---|---|---|
| M38510/24401BEX | military specifications | microcircuit memory | RFQ |
| 5962-3824401BEA | military specifications | microcircuit memory | RFQ |
| MIL-M-38510/244 | military specifications | microcircuit memory | RFQ |
| 5962-3824401BEX | military specifications | microcircuit memory | RFQ |
| 5962-3824401BEB | military specifications | microcircuit memory | RFQ |
| AM9064 15L BEA | advanced micro devices inc | microcircuit memory | RFQ |
| M38510/24401BEA | military specifications | microcircuit memory | RFQ |
| MKB4564P-82 | st microelectronics ltd | microcircuit memory | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 0.840 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.310 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.185 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
| AFGA | OPERATING TEMP RANGE | -55.0 TO 110.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND DYNAMIC AND W/STROBE |
| CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 12 INPUT |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-2 MIL-M-38510 |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 150.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,LOW TO HIGH LEVEL OUTPUT AND 150.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,HIGH TO LOW LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | ROM |
| TEST | TEST DATA DOCUMENT | 81349-MIL-M-38510 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLECTI |
| TTQY | TERMINAL TYPE AND QUANTITY | 16 PRINTED CIRCUIT |
| ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-M-38510/244 GOVERNMENT SPECIFICATION |
| Relevant Components for NSN - 5962-01-264-2990, 5962012642990 | ||||
| 5999-01-196-8879 (5999011968879) | 5970-00-488-9670 (5970004889670) | 5945-01-477-0491 (5945014770491) | 5999-01-364-2930 (5999013642930) | |
| 5996-01-452-4386 (5996014524386) | 5945-00-260-1626 (5945002601626) | 5998-01-130-0814 (5998011300814) | 5905-00-557-4486 (5905005574486) | |
| 5935-01-689-9407 (5935016899407) | 5980-01-504-2998 (5980015042998) | 5935-00-644-6464 (5935006446464) | 5995-01-277-3853 (5995012773853) | |
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