AS9120B, ISO 9001:2015, and FAA AC 0056B Accredited
| Item Name | Microcircuit Memory |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5962 Microcircuits Electronic |
| National Item Identification Number (NIIN) | 01-278-3555 (012783555) |
| NCB Code | USA (01) |
| Manufacturer | Kearfott Corporation, Texas Instruments Inc, St Microelectronics Ltd, Intersil Corporation, Dla Land And Maritime, Honeywell International Inc, Fujitsu Microelectronics Ltd, Logic Devices Incorporated, Synertek, Integrated Device Technology Inc, Hewlett-Packard Company |
| Part Number | Manufacturer | Item Name | RFQ |
|---|---|---|---|
| A584A177-101 | kearfott corporation | microcircuit memory | RFQ |
| A584A177-101 | texas instruments inc | microcircuit memory | RFQ |
| MK4118N2 | st microelectronics ltd | microcircuit memory | RFQ |
| HM4-6116-2 | intersil corporation | microcircuit memory | RFQ |
| 84036 | dla land and maritime | microcircuit memory | RFQ |
| A584A177-111 | kearfott corporation | microcircuit memory | RFQ |
| 513-097-9301 | honeywell international inc | microcircuit memory | RFQ |
| MB8416A-12L | fujitsu microelectronics ltd | microcircuit memory | RFQ |
| L6116HMB120 | logic devices incorporated | microcircuit memory | RFQ |
| 8403615JA | dla land and maritime | microcircuit memory | RFQ |
| HM1-65162B-8 | intersil corporation | microcircuit memory | RFQ |
| SYMD2128-2M16019 | synertek | microcircuit memory | RFQ |
| SYMD2128-2 | synertek | microcircuit memory | RFQ |
| IDT6116LA120DM | integrated device technology inc | microcircuit memory | RFQ |
| 1LJ6-0001 | hewlett-packard company | microcircuit memory | RFQ |
| A584A177-101 | integrated device technology inc | microcircuit memory | RFQ |
| 8403615JB | dla land and maritime | microcircuit memory | RFQ |
| 8403615JX | dla land and maritime | microcircuit memory | RFQ |
| A584A177-101 | fujitsu microelectronics ltd | microcircuit memory | RFQ |
| IDT6116LA120DB | integrated device technology inc | microcircuit memory | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 1.290 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.210 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
| AFGA | OPERATING TEMP RANGE | -55.0/125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -55.0/150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND BURN IN AND STATIC OPERATION AND 3-STATE OUTPUT AND BIDIRECTIONAL |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 22 INPUT |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-3 MIL-M-38510 |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 90.00 MILLIAMPERES MAXIMUM SUPPLY |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.0 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 120.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,LOW TO HIGH LEVEL OUTPUT AND 120.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,HIGH TO LOW LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | RAM |
| CZZZ | MEMORY CAPACITY | UNKNOWN |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS,INDIVIDUAL MANUFACTUREER STANDARDS,ETC.). |
| TTQY | TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT |
| Relevant Components for NSN - 5962-01-278-3555, 5962012783555 | ||||
| 5985-01-360-2114 (5985013602114) | 5950-01-481-1072 (5950014811072) | 5910-01-015-2302 (5910010152302) | 5930-00-578-6955 (5930005786955) | |
| 5975-01-563-7366 (5975015637366) | 5950-01-261-6319 (5950012616319) | 5962-01-133-3642 (5962011333642) | 5915-01-464-8685 (5915014648685) | |
| 5935-00-763-8252 (5935007638252) | 5910-00-833-8207 (5910008338207) | 5905-01-258-4942 (5905012584942) | 5935-00-825-5145 (5935008255145) | |
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