AS9120B, ISO 9001:2015, and FAA AC 0056B Accredited
| Item Name | Microcircuit Memory |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5962 Microcircuits Electronic |
| National Item Identification Number (NIIN) | 01-299-4554 (012994554) |
| NCB Code | USA (01) |
| Manufacturer | Pyramid Semiconductor Corp, Dla Land And Maritime, E2v Inc, Cypress Semiconductor Inc, Northrop Grumman Systems Corporation |
| Part Number | Manufacturer | Item Name | RFQ |
|---|---|---|---|
| P4C116-45LMB | pyramid semiconductor corp | microcircuit memory | RFQ |
| 8403609YB | dla land and maritime | microcircuit memory | RFQ |
| 8403609YX | dla land and maritime | microcircuit memory | RFQ |
| QP7C128A-45LMB | e2v inc | microcircuit memory | RFQ |
| 84036 | dla land and maritime | microcircuit memory | RFQ |
| CY7C128A-45LMB | cypress semiconductor inc | microcircuit memory | RFQ |
| 058-005315-001 | northrop grumman systems corporation | microcircuit memory | RFQ |
| 8403609YA | dla land and maritime | microcircuit memory | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 0.392 INCHES MINIMUM AND 0.408 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.292 INCHES MINIMUM AND 0.308 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.062 INCHES MINIMUM AND 0.078 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
| AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND BIDIRECTIONAL AND W/ENABLE |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQSZ | INCLOSURE CONFIGURATION | LEADLESS FLAT PACK |
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 22 INPUT |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.3 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,LOW TO HIGH LEVEL OUTPUT AND 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,HIGH TO LOW LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | RAM |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS,INDIVIDUAL MANUFACTUREER STANDARDS,ETC.). |
| TTQY | TERMINAL TYPE AND QUANTITY | 24 LEADLESS |
| Relevant Components for NSN - 5962-01-299-4554, 5962012994554 | ||||
| 5985-01-360-2114 (5985013602114) | 5950-01-481-1072 (5950014811072) | 5910-01-015-2302 (5910010152302) | 5930-00-578-6955 (5930005786955) | |
| 5975-01-563-7366 (5975015637366) | 5950-01-261-6319 (5950012616319) | 5962-01-133-3642 (5962011333642) | 5915-01-464-8685 (5915014648685) | |
| 5935-00-763-8252 (5935007638252) | 5910-00-833-8207 (5910008338207) | 5905-01-258-4942 (5905012584942) | 5935-00-825-5145 (5935008255145) | |
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