Item Name | Microcircuit Memory |
Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
Federal Supply Class (FSC) | 5962 Microcircuits Electronic |
National Item Identification Number (NIIN) | 01-326-2822 (013262822) |
NCB Code | USA (01) |
Manufacturer | Advanced Micro Devices Inc, Dla Land And Maritime, Atmel Corporation, L 3 Communications Corporation, Raytheon E Systems Inc, Intel Corporation |
Part Number | Manufacturer | Item Name | RFQ |
---|---|---|---|
AM27C512-250 BXA | advanced micro devices inc | microcircuit memory | RFQ |
8513501YA | dla land and maritime | microcircuit memory | RFQ |
AT27C512-250M 883 | atmel corporation | microcircuit memory | RFQ |
85-49118-001 | l 3 communications corporation | microcircuit memory | RFQ |
85-49118-001 | raytheon e systems inc | microcircuit memory | RFQ |
MD27512-251B | intel corporation | microcircuit memory | RFQ |
5962 8513501BYA | dla land and maritime | microcircuit memory | RFQ |
NH85-49118-001 | dla land and maritime | microcircuit memory | RFQ |
AT27C512 25DM 883 | atmel corporation | microcircuit memory | RFQ |
5962-8764803BXA | dla land and maritime | microcircuit memory | RFQ |
5962-8764803XA | dla land and maritime | microcircuit memory | RFQ |
MRC | Criteria | Characteristic |
---|---|---|
CRTL | CRITICALITY CODE JUSTIFICATION | FEAT |
TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS,INDIVIDUAL MANUFACTUREER STANDARDS,ETC.). |
TTQY | TERMINAL TYPE AND QUANTITY | 28 PRINTED CIRCUIT |
CBBL | FEATURES PROVIDED | ULTRAVIOLET ERASABLE AND MONOLITHIC AND PROGRAMMABLE AND W/BUFFERED OUTPUT AND W/ENABLE AND ELECTROSTATIC SENSITIVE |
CSWJ | WORD QUANTITY | 65536 |
FEAT | SPECIAL FEATURES | NUCLEAR HARDNESS CRITICAL ITEM |
ABKW | OVERALL HEIGHT | 0.432 INCHES MAXIMUM |
ADAQ | BODY LENGTH | 1.490 INCHES MAXIMUM |
ADAT | BODY WIDTH | 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM |
ADAU | BODY HEIGHT | 0.172 INCHES MINIMUM AND 0.217 INCHES MAXIMUM |
AFGA | OPERATING TEMP RANGE | -55.0/125.0 DEG CELSIUS |
CQSJ | INCLOSURE MATERIAL | CERAMIC |
CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
CQZP | INPUT CIRCUIT PATTERN | 18 INPUT |
CRHL | BIT QUANTITY | 524288 |
CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-10 MIL-M-38510 |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 14.0 VOLTS MAXIMUM POWER SOURCE |
AFJQ | STORAGE TEMP RANGE | -65.0/150.0 DEG CELSIUS |
CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
CZER | MEMORY DEVICE TYPE | ROM |
AEHX | MAXIMUM POWER DISSIPATION RATING | 825.0 MILLIWATTS |
Relevant Components for NSN - 5962-01-326-2822, 5962013262822 | ||||
5999-01-196-8879 (5999011968879) | 5970-00-488-9670 (5970004889670) | 5945-01-477-0491 (5945014770491) | 5999-01-364-2930 (5999013642930) | |
5996-01-452-4386 (5996014524386) | 5945-00-260-1626 (5945002601626) | 5998-01-130-0814 (5998011300814) | 5905-00-557-4486 (5905005574486) | |
5935-01-689-9407 (5935016899407) | 5980-01-504-2998 (5980015042998) | 5935-00-644-6464 (5935006446464) | 5995-01-277-3853 (5995012773853) | |
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