AS9120B, ISO 9001:2015, and FAA AC 0056B Accredited
| Item Name | Microcircuit Memory |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5962 Microcircuits Electronic |
| National Item Identification Number (NIIN) | 01-330-0696 (013300696) |
| NCB Code | USA (01) |
| Manufacturer | Dla Land And Maritime, Integrated Device Technology Inc, Texas Instruments Inc, Nimikkeistokeskus Ncb Finland, Cypress Semiconductor Inc, Navair And Navsea Managed |
| Part Number | Manufacturer | Item Name | RFQ |
|---|---|---|---|
| 8403611LA | dla land and maritime | microcircuit memory | RFQ |
| IDT6116SA55TDB | integrated device technology inc | microcircuit memory | RFQ |
| SMJ68CE16S-55JDM | texas instruments inc | microcircuit memory | RFQ |
| 10133966 | nimikkeistokeskus ncb finland | microcircuit memory | RFQ |
| CY7C128-55DMB | cypress semiconductor inc | microcircuit memory | RFQ |
| CY7C128A-55DMB | cypress semiconductor inc | microcircuit memory | RFQ |
| 3255393-119 | navair and navsea managed | microcircuit memory | RFQ |
| 8403611LB | dla land and maritime | microcircuit memory | RFQ |
| 84036 | dla land and maritime | microcircuit memory | RFQ |
| 8403611LX | dla land and maritime | microcircuit memory | RFQ |
| IDT6116SA55TB | integrated device technology inc | microcircuit memory | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
| AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.0 VOLTS MAXIMUM POWER SOURCE |
| ADAQ | BODY LENGTH | 1.280 INCHES MAXIMUM |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS,INDIVIDUAL MANUFACTUREER STANDARDS,ETC.). |
| TTQY | TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT |
| ADAU | BODY HEIGHT | 0.200 INCHES MAXIMUM |
| AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | MONOLITHIC AND STATIC OPERATION |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQZP | INPUT CIRCUIT PATTERN | 22 INPUT |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-9 MIL-M-38510 |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 120.00 MILLIAMPERES MAXIMUM SUPPLY |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| ADAT | BODY WIDTH | 0.310 INCHES MAXIMUM |
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| CZER | MEMORY DEVICE TYPE | RAM |
| Relevant Components for NSN - 5962-01-330-0696, 5962013300696 | ||||
| 5985-01-360-2114 (5985013602114) | 5950-01-481-1072 (5950014811072) | 5910-01-015-2302 (5910010152302) | 5930-00-578-6955 (5930005786955) | |
| 5975-01-563-7366 (5975015637366) | 5950-01-261-6319 (5950012616319) | 5962-01-133-3642 (5962011333642) | 5915-01-464-8685 (5915014648685) | |
| 5935-00-763-8252 (5935007638252) | 5910-00-833-8207 (5910008338207) | 5905-01-258-4942 (5905012584942) | 5935-00-825-5145 (5935008255145) | |
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