AS9120B, ISO 9001:2015, and FAA AC 0056B Accredited
| Item Name | Microcircuit Memory |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5962 Microcircuits Electronic |
| National Item Identification Number (NIIN) | 01-408-2869 (014082869) |
| NCB Code | USA (01) |
| Manufacturer | Samsung Semiconductor Inc, Nec Electronics Usa Inc, Hitachi America Ltd |
| Part Number | Manufacturer | Item Name | RFQ |
|---|---|---|---|
| K6T1008C2EDB7000 | samsung semiconductor inc | microcircuit memory | RFQ |
| PD431000ACZ-70L | nec electronics usa inc | microcircuit memory | RFQ |
| UPD431000ACZ-70L | nec electronics usa inc | microcircuit memory | RFQ |
| HM628128LP-7 | hitachi america ltd | microcircuit memory | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS" |
| AFGA | OPERATING TEMP RANGE | +0.0 TO 70.0 DEG CELSIUS" |
| AFJQ | STORAGE TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS" |
| AGAV | END ITEM IDENTIFICATION | REMOTE TERMINAL UNIT, WLB-RTU (1 TO 10)" |
| CBBL | FEATURES PROVIDED | 3-STATE OUTPUT" |
| CQSJ | INCLOSURE MATERIAL | PLASTIC" |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE" |
| CQZP | INPUT CIRCUIT PATTERN | 8 INPUT" |
| CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | CMOS STATIC RAM" |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 4.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE" |
| CZER | MEMORY DEVICE TYPE | RAM" |
| FEAT | SPECIAL FEATURES | 128K-WORD X 8-BIT CAPACITY; 70 NS ACCESS TIME; DIRECT TTL COMPATIBILITY; BATTERY BACK-UP OPERATION CAPABILITY" |
| TTQY | TERMINAL TYPE AND QUANTITY | 32 FLAT LEADS" |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS" |
| AFGA | OPERATING TEMP RANGE | +0.0 TO 70.0 DEG CELSIUS" |
| AFJQ | STORAGE TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS" |
| AGAV | END ITEM IDENTIFICATION | REMOTE TERMINAL UNIT, WLB-RTU (1 TO 10)" |
| CBBL | FEATURES PROVIDED | 3-STATE OUTPUT" |
| CQSJ | INCLOSURE MATERIAL | PLASTIC" |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE" |
| CQZP | INPUT CIRCUIT PATTERN | 8 INPUT" |
| CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | CMOS STATIC RAM" |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 4.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE" |
| CZER | MEMORY DEVICE TYPE | RAM" |
| FEAT | SPECIAL FEATURES | 128K-WORD X 8-BIT CAPACITY; 70 NS ACCESS TIME; DIRECT TTL COMPATIBILITY; BATTERY BACK-UP OPERATION CAPABILITY" |
| TTQY | TERMINAL TYPE AND QUANTITY | 32 FLAT LEADS" |
| Relevant Components for NSN - 5962-01-408-2869, 5962014082869 | ||||
| 5910-00-945-9006 (5910009459006) | 5950-01-316-6723 (5950013166723) | 5999-01-492-5183 (5999014925183) | 5998-01-069-2436 (5998010692436) | |
| 5950-00-455-4656 (5950004554656) | 5905-00-104-0708 (5905001040708) | 5998-00-941-6139 (5998009416139) | 5985-01-240-5388 (5985012405388) | |
| 5995-01-192-0035 (5995011920035) | 5990-00-940-3085 (5990009403085) | 5930-00-611-4926 (5930006114926) | 5999-01-711-0585 (5999017110585) | |
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