Thank you for taking an interest in the Microcircuit Memory NSN parts that we carry here on Buy Military Ground Vehicle Parts. You have reached the RFQ page for part number AM29F0106B-120EI, an item that traces back to the manufacturer Advanced Micro Devices Inc. Listed with NSN 5962015228086, this listing is available for purchase from our website at any time. If you are interested in part number AM29F0106B-120EI and wish to learn more, be sure to fill out and submit the RFQ form found on this page. By presenting us information such as your target price and expected delivery date, we can best formulate and present a solution that closely caters to your unique needs and restrictions alike.
NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5962-01-522-8086 Item Description: Microcircuit Memory | 5962 | 015228086 | 0 | N | B | |
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
7 | B | A | 0 | |||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
Am29f0106b-120ei | 1 | 5 |
MRC | Criteria | Characteristic |
---|---|---|
ABHP | OVERALL LENGTH | 0.787 INCHES NOMINAL" |
ABKW | OVERALL HEIGHT | 0.047 INCHES MAXIMUM" |
ABMK | OVERALL WIDTH | 0.472 INCHES NOMINAL" |
ADAQ | BODY LENGTH | 0.724 INCHES NOMINAL" |
ADAT | BODY WIDTH | 0.472 INCHES NOMINAL" |
ADAU | BODY HEIGHT | 0.039 INCHES NOMINAL" |
AFGA | OPERATING TEMP RANGE | -40.0/+85.0 DEG CELSIUS" |
AFJQ | STORAGE TEMP RANGE | -65.0/+125.0 DEG CELSIUS" |
CBBL | FEATURES PROVIDED | ELECTROSTATIC SENSITIVE AND RADIATION HARDENED" |
CQSZ | INCLOSURE CONFIGURATION | LEADED CHIP CARRIER" |
CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC" |
CRTL | CRITICALITY CODE JUSTIFICATION | AFGA AND AFJQ AND CBBL" |
CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | MICROCIRCUIT, MEMORY, FLASH" |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -2.0 VOLTS MINIMUM INPUT AND 7.0 VOLTS MAXIMUM INPUT" |
CZEQ | TIME RATING PER CHACTERISTIC | 120.00 NANOSECONDS AF OUTPUT MEGAWATTS" |
CZER | MEMORY DEVICE TYPE | EEPROM" |
CZZZ | MEMORY CAPACITY | 2079152 X 8-BIT" |
NHCF | NUCLEAR HARDNESS CRITICAL FEATURE | HARDENED" |
TTQY | TERMINAL TYPE AND QUANTITY | 48 GULLWING" |
ABHP | OVERALL LENGTH | 0.787 INCHES NOMINAL" |
ABKW | OVERALL HEIGHT | 0.047 INCHES MAXIMUM" |
ABMK | OVERALL WIDTH | 0.472 INCHES NOMINAL" |
ADAQ | BODY LENGTH | 0.724 INCHES NOMINAL" |
ADAT | BODY WIDTH | 0.472 INCHES NOMINAL" |
ADAU | BODY HEIGHT | 0.039 INCHES NOMINAL" |
AFGA | OPERATING TEMP RANGE | -40.0/+85.0 DEG CELSIUS" |
AFJQ | STORAGE TEMP RANGE | -65.0/+125.0 DEG CELSIUS" |
CBBL | FEATURES PROVIDED | ELECTROSTATIC SENSITIVE AND RADIATION HARDENED" |
CQSZ | INCLOSURE CONFIGURATION | LEADED CHIP CARRIER" |
CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC" |
CRTL | CRITICALITY CODE JUSTIFICATION | AFGA AND AFJQ AND CBBL" |
CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | MICROCIRCUIT, MEMORY, FLASH" |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -2.0 VOLTS MINIMUM INPUT AND 7.0 VOLTS MAXIMUM INPUT" |
CZEQ | TIME RATING PER CHACTERISTIC | 120.00 NANOSECONDS AF OUTPUT MEGAWATTS" |
CZER | MEMORY DEVICE TYPE | EEPROM" |
CZZZ | MEMORY CAPACITY | 2079152 X 8-BIT" |
NHCF | NUCLEAR HARDNESS CRITICAL FEATURE | HARDENED" |
TTQY | TERMINAL TYPE AND QUANTITY | 48 GULLWING" |
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