Request a Quote on Bae Systems Inc Part Number 310403P42 with the NSN 5962-01-016-7269 Today!

Part Number: 310403P42

Manufacturer: Bae Systems Inc

NSN: 5962-01-016-7269

NIIN: 010167269

Item Name : Microcircuit Memory

CAGE Code: 94117

FSC: 5962 Microcircuits Electronic

FSG: 59 Electrical and Electronic Equipment Components

Country: USA

NCB Code: 01

Thank you for taking an interest in the Microcircuit Memory NSN parts that we carry here on Buy Military Ground Vehicle Parts. You have reached the RFQ page for part number 310403P42, an item that traces back to the manufacturer Bae Systems Inc. Listed with NSN 5962010167269, this listing is available for purchase from our website at any time. If you are interested in part number 310403P42 and wish to learn more, be sure to fill out and submit the RFQ form found on this page. By presenting us information such as your target price and expected delivery date, we can best formulate and present a solution that closely caters to your unique needs and restrictions alike.

Product Details

“*” Required Fields Are Compulsory

Contact Information

* By clicking this box, I acknowledge that I have read and accept the ASAP Semiconductor Terms and Conditions and agree that all quotes and purchase orders are exclusively subject to the ASAP Semiconductor Customer Terms and Conditions.

I consent to receive email communications from ASAP Semiconductor and can unsubscribe at any time.
ASAP Semiconductor is a wholly independent aftermarket parts distributor.
This website is intended for quotations based on part numbers only. Please DO NOT submit drawings, technical data, or other specifications through this portal.

Disclaimer: This is a quotation for the goods listed above. This quotation is meant as an estimate and does not reflect a final bill or invoice. All quotations are subject to change until acceptance by ASAP Semiconductor of a binding Purchase Order, and quotations may be withdrawn or revised at the sole discretion of ASAP Semiconductor. This quotation is subject to the ASAP Semiconductor Terms & Conditions available at https://www.asapsemi.com/terms-conditions.aspx . All United States Government and Department of Defense bids are quoted as CAGE code 6RE77 from ASAP Semiconductor’s Anaheim, California facility. Any quotation from ASAP Semiconductor without 6RE77 is void.

Note : We Will Not Share Your Information To Any Third Parties.

Upload RFQ SHEET

If you have more than one item, upload your spreadsheet here

Upload File

To make the part searching process as simple as possible, we choose to list offerings with as much relevant information as we can. For example, while part number 310403P42 is manufactured by Bae Systems Inc, it is specifically listed along with CAGE Code 94117. With this identifier, you can trace this item back to the exact facility it was sourced from. Additionally, with the NSN 5962-01-016-7269, this signifies that the product belongs to the Federal Supply Class 5962 Microcircuits Electronic. Alongside our easy-to-navigate database, we also offer highly competitive pricing and rapid lead times for the benefit of our customers. Get in touch with an industry expert today and see why so many customers steadily depend on us for their operational needs.

NSN Information for Part Number 310403P42 with NSN 5962-01-016-7269, 5962010167269

NSN	FSC	NIIN	CLS	Hazmat	DEMIL	Cancelled NSN
5962-01-016-7269 Item Description: Microcircuit Memory	5962	010167269	0	N	B
	CIIC	HCC	ESD	PMIC	Criticality	ENAC
	U		B	U
Part Number	ISC	RNVC	RNCC	HCC	MSDS	SADC
310403p42	C	2	3

Characteristics Data of NSN 5962-01-016-7269, 5962010167269

MRC	Criteria	Characteristic
MEMORY	ADAQ	BODY LENGTH0 365 INCHES MINIMUM AND 0 385 INCHES MAXIMUM
MEMORY	ADAT	BODY WIDTH0 240 INCHES MINIMUM AND 0 260 INCHES MAXIMUM
MEMORY	ADAU	BODY HEIGHT0 035 INCHES MINIMUM AND 0 070 INCHES MAXIMUM
MEMORY	AFGA	OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS
MEMORY	AFJQ	STORAGE TEMP RANGE-65 0125 0 DEG CELSIUS
MEMORY	CBBL	FEATURES PROVIDEDHERMETICALLY SEALED AND HIGH SPEED AND PROGRAMMABLE AND PROGRAMMED AND WBUFFERED OUTPUT AND WDECODED OUTPUT AND WENABLE AND 3-STATE OUTPUT
MEMORY	CQSJ	INCLOSURE MATERIALCERAMIC
MEMORY	CQSZ	INCLOSURE CONFIGURATIONFLAT PACK
MEMORY	CQWX	OUTPUT LOGIC FORMTRANSISTOR-TRANSISTOR LOGIC
MEMORY	CQZP	INPUT CIRCUIT PATTERN10 INPUT
MEMORY	CWSG	TERMINAL SURFACE TREATMENTSOLDER
MEMORY	CZEN	VOLTAGE RATING AND TYPE PER CHARACTERISTIC-1 5 VOLTS MINIMUM POWER SOURCE AND 5 5 VOLTS MAXIMUM POWER SOURCE
MEMORY	CZEQ	TIME RATING PER CHACTERISTIC70 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT
MEMORY	CZER	MEMORY DEVICE TYPEROM
MEMORY	CZZZ	MEMORY CAPACITYUNKNOWN
MEMORY	TEST	TEST DATA DOCUMENT94117-310403 DRAWING THIS IS THE BASIC GOVERNING DRAWING SUCH AS A CONTRACTOR DRAWING ORIGINAL EQUIPMENT MANUFACTURER DRAWING ETC EXCLUDES ANY SPECIFICATION STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWI
MEMORY	TTQY	TERMINAL TYPE AND QUANTITY16 FLAT LEADS