Thank you for taking an interest in the Semiconductor Device Diode NSN parts that we carry here on Buy Military Ground Vehicle Parts. You have reached the RFQ page for part number RHRP860, an item that traces back to the manufacturer Fairchild Semiconductor Corp. Listed with NSN 5961015989426, this listing is available for purchase from our website at any time. If you are interested in part number RHRP860 and wish to learn more, be sure to fill out and submit the RFQ form found on this page. By presenting us information such as your target price and expected delivery date, we can best formulate and present a solution that closely caters to your unique needs and restrictions alike.
NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5961-01-598-9426 Item PartTypeName: SEMICONDUCTOR DEVICE,DIODE | 5961 | 015989426 | N | A | ||
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
A | A | 0 | ||||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
RHRP860 | 5 | 9 | 3 |
MRC | Criteria | Characteristic |
---|---|---|
AKPV | MOUNTING FACILITY QUANTITY | 1" |
AXGY | MOUNTING METHOD | UNTHREADED HOLE" |
CTMZ | SEMICONDUCTOR MATERIAL | SILICON ALLOY" |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 400.0 MINIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 600.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 400.0 MINIMUM WORKING PEAK REVERSE VOLTAGE AND 600.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE" |
CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | HYPERFAST DIODE" |
FEAT | SPECIAL FEATURES | THIS DIODE IS OF SILICON NITRIDE PASSIVATED ION-IMPLANTED EPITAXIAL PLANAR CONSTRUCTION AND TAKES 8 AMPS." |
AKPV | MOUNTING FACILITY QUANTITY | 1" |
AXGY | MOUNTING METHOD | UNTHREADED HOLE" |
CTMZ | SEMICONDUCTOR MATERIAL | SILICON ALLOY" |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 400.0 MINIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 600.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 400.0 MINIMUM WORKING PEAK REVERSE VOLTAGE AND 600.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE" |
CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | HYPERFAST DIODE" |
FEAT | SPECIAL FEATURES | THIS DIODE IS OF SILICON NITRIDE PASSIVATED ION-IMPLANTED EPITAXIAL PLANAR CONSTRUCTION AND TAKES 8 AMPS." |
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