Request a Quote on General Electric Company Part Number SMTD886 with the NSN 5961-01-015-7048 Today!

Part Number: SMTD886

Manufacturer: General Electric Company

NSN: 5961-01-015-7048

NIIN: 010157048

Item Name : Semiconductor Device Diode

CAGE Code: 03508

FSC: 5961 Semiconductor Devices and Associated Hardware

FSG: 59 Electrical and Electronic Equipment Components

Country: USA

NCB Code: 01

Thank you for taking an interest in the Semiconductor Device Diode NSN parts that we carry here on Buy Military Ground Vehicle Parts. You have reached the RFQ page for part number SMTD886, an item that traces back to the manufacturer General Electric Company. Listed with NSN 5961010157048, this listing is available for purchase from our website at any time. If you are interested in part number SMTD886 and wish to learn more, be sure to fill out and submit the RFQ form found on this page. By presenting us information such as your target price and expected delivery date, we can best formulate and present a solution that closely caters to your unique needs and restrictions alike.

Product Details

“*” Required Fields Are Compulsory

Contact Information

* By clicking this box, I acknowledge that I have read and accept the ASAP Semiconductor Terms and Conditions and agree that all quotes and purchase orders are exclusively subject to the ASAP Semiconductor Customer Terms and Conditions.

I consent to receive email communications from ASAP Semiconductor and can unsubscribe at any time.
ASAP Semiconductor is a wholly independent aftermarket parts distributor.
This website is intended for quotations based on part numbers only. Please DO NOT submit drawings, technical data, or other specifications through this portal.

Disclaimer: This is a quotation for the goods listed above. This quotation is meant as an estimate and does not reflect a final bill or invoice. All quotations are subject to change until acceptance by ASAP Semiconductor of a binding Purchase Order, and quotations may be withdrawn or revised at the sole discretion of ASAP Semiconductor. This quotation is subject to the ASAP Semiconductor Terms & Conditions available at https://www.asapsemi.com/terms-conditions.aspx . All United States Government and Department of Defense bids are quoted as CAGE code 6RE77 from ASAP Semiconductor’s Anaheim, California facility. Any quotation from ASAP Semiconductor without 6RE77 is void.

Note : We Will Not Share Your Information To Any Third Parties.

Upload RFQ SHEET

If you have more than one item, upload your spreadsheet here

Upload File

To make the part searching process as simple as possible, we choose to list offerings with as much relevant information as we can. For example, while part number SMTD886 is manufactured by General Electric Company, it is specifically listed along with CAGE Code 03508. With this identifier, you can trace this item back to the exact facility it was sourced from. Additionally, with the NSN 5961-01-015-7048, this signifies that the product belongs to the Federal Supply Class 5961 Semiconductor Devices and Associated Hardware. Alongside our easy-to-navigate database, we also offer highly competitive pricing and rapid lead times for the benefit of our customers. Get in touch with an industry expert today and see why so many customers steadily depend on us for their operational needs.

NSN Information for Part Number SMTD886 with NSN 5961-01-015-7048, 5961010157048

NSN	FSC	NIIN	CLS	Hazmat	DEMIL	Cancelled NSN
5961-01-015-7048 Item PartTypeName: SEMICONDUCTOR DEVICE,DIODE	5961	010157048	0	N
	CIIC	HCC	ESD	PMIC	Criticality	ENAC
	U			U
Part Number	ISC	RNVC	RNCC	HCC	MSDS	SADC
SMTD886	2	9	5

Characteristics Data of NSN 5961-01-015-7048, 5961010157048

MRC	Criteria	Characteristic
ABHP	OVERALL LENGTH	0.020 INCHES NOMINAL
ADAV	OVERALL DIAMETER	0.050 INCHES NOMINAL
AXGY	MOUNTING METHOD	TERMINAL
CBBL	FEATURES PROVIDED	HERMETICALLY SEALED CASE
CTQN	VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	425.0 MAXIMUM VALLEY-POINT VOLTAGE
CTQX	CURRENT RATING PER CHARACTERISTIC	55.00 AMPERES MAXIMUM PEAK POINT CURRENT
CTRD	POWER RATING PER CHARACTERISTIC	18.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
MATT	MATERIAL	GERMANIUM SEMICONDUCTOR