Thank you for taking an interest in the Light Emitting Diode NSN parts that we carry here on Buy Military Ground Vehicle Parts. You have reached the RFQ page for part number HLMP-K150-OPT.002, an item that traces back to the manufacturer Hewlett-Packard Company. Listed with NSN 5980014509329, this listing is available for purchase from our website at any time. If you are interested in part number HLMP-K150-OPT.002 and wish to learn more, be sure to fill out and submit the RFQ form found on this page. By presenting us information such as your target price and expected delivery date, we can best formulate and present a solution that closely caters to your unique needs and restrictions alike.
NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5980-01-450-9329 Item PartTypeName: LIGHT EMITTING DIODE | 5980 | 014509329 | 0 | N | A | |
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
U | A | A | 0 | |||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
25.662 | 5 | 2 | 5 |
MRC | Criteria | Characteristic |
---|---|---|
CTQN | Voltage Rating In Volts Per Characteristic | 5.0 NOMINAL REVERSE VOLTAGE, DC |
ADAV | Overall Diameter | 3.180 INCHES MAXIMUM |
CTQX | Current Rating Per Characteristic | 300.00 MILLIAMPERES ALL PRIMARIES ABSOLUTE |
CTSB | Luminous Intensity | 1.0 MICROCANDELA NOMINAL |
CTRX | Color Tone Produced Per Source | RED LENS |
ABHP | Overall Length | 4.700 INCHES MAXIMUM |
CTRD | Power Rating Per Characteristic | 87.0 MILLIWATTS ANY ACCEPTABLE PRESET |
AXGY | Mounting Method | TERMINAL |
ALAS | Internal Configuration | JUNCTION CONTACT |
TTQY | Terminal Type And Quantity | 2 UNINSULATED WIRE LEAD |
ALAZ | Joint Electronic Device Engineering Council/Jedec/Case Outline Designation | T-1 |
AEXK | Lens Transparency | TRANSLUCENT |
ABBH | Inclosure Material | PLASTIC |
AYQS | Terminal Circle Diameter | 0.450 INCHES NOMINAL |
ABJT | Terminal Length | 1.270 INCHES NOMINAL |
MRC | Decoded Requirement | Clear Text Reply |
ASCQ | Internal Junction Configuration | PN |
CTMZ | Semiconductor Material | GALLIUM INDIUM ARSENIC PHOSPHIDE |
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