Thank you for taking an interest in the Microcircuit Memory NSN parts that we carry here on Buy Military Ground Vehicle Parts. You have reached the RFQ page for part number IDT71256S100DB, an item that traces back to the manufacturer Integrated Device Technology Inc. Listed with NSN 5962013201678, this listing is available for purchase from our website at any time. If you are interested in part number IDT71256S100DB and wish to learn more, be sure to fill out and submit the RFQ form found on this page. By presenting us information such as your target price and expected delivery date, we can best formulate and present a solution that closely caters to your unique needs and restrictions alike.
NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5962-01-320-1678 Item PartTypeName: MICROCIRCUIT,MEMORY | 5962 | 013201678 | 0 | N | B | |
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
U | B | A | 0 | |||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
5962-8866201MXX | 2 | 9 | 5 |
MRC | Criteria | Characteristic |
---|---|---|
ADAQ | BODY LENGTH | 1.490 INCHES MAXIMUM |
ADAT | BODY WIDTH | 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM |
ADAU | BODY HEIGHT | 0.172 INCHES MINIMUM AND 0.217 INCHES MAXIMUM |
AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND BURN IN AND STATIC OPERATION AND W/ENABLE AND BIDIRECTIONAL |
CQSJ | INCLOSURE MATERIAL | CERAMIC |
CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
CQZP | INPUT CIRCUIT PATTERN | 26 INPUT |
CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-10 MIL-M-38510 |
CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE |
CZEQ | TIME RATING PER CHACTERISTIC | 100.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,LOW TO HIGH LEVEL OUTPUT AND 100.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,HIGH TO LOW LEVEL OUTPUT |
CZER | MEMORY DEVICE TYPE | RAM |
CZZZ | MEMORY CAPACITY | UNKNOWN |
TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS,INDIVIDUAL MANUFACTUREER STANDARDS,ETC.). |
TTQY | TERMINAL TYPE AND QUANTITY | 28 PRINTED CIRCUIT |
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