Request a Quote on Integrated Device Technology Inc Part Number IDT71256S35DB with the NSN 5962-01-412-0260 Today!

Part Number: IDT71256S35DB
NIIN: 014120260
Item Name : Microcircuit Memory
CAGE Code: 61772
FSG: 59 Electrical and Electronic Equipment Components
Country: USA
NCB Code: 01

Thank you for taking an interest in the Microcircuit Memory NSN parts that we carry here on Buy Military Ground Vehicle Parts. You have reached the RFQ page for part number IDT71256S35DB, an item that traces back to the manufacturer Integrated Device Technology Inc. Listed with NSN 5962014120260, this listing is available for purchase from our website at any time. If you are interested in part number IDT71256S35DB and wish to learn more, be sure to fill out and submit the RFQ form found on this page. By presenting us information such as your target price and expected delivery date, we can best formulate and present a solution that closely caters to your unique needs and restrictions alike.

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To make the part searching process as simple as possible, we choose to list offerings with as much relevant information as we can. For example, while part number IDT71256S35DB is manufactured by Integrated Device Technology Inc, it is specifically listed along with CAGE Code 61772. With this identifier, you can trace this item back to the exact facility it was sourced from. Additionally, with the NSN 5962-01-412-0260, this signifies that the product belongs to the Federal Supply Class 5962 Microcircuits Electronic. Alongside our easy-to-navigate database, we also offer highly competitive pricing and rapid lead times for the benefit of our customers. Get in touch with an industry expert today and see why so many customers steadily depend on us for their operational needs. 

NSN Information for Part Number IDT71256S35DB with NSN 5962-01-412-0260, 5962014120260

NSNFSCNIINCLSHazmatDEMILCancelled NSN
5962-01-412-0260

Item PartTypeName:

MICROCIRCUIT,MEMORY

59620141202600ND
CIICHCCESDPMICCriticalityENAC
7DA0
Part NumberISCRNVCRNCCHCCMSDSSADC
CY7C198-35DBM515

Characteristics Data of NSN 5962-01-412-0260, 5962014120260

MRCCriteriaCharacteristic
ADAQBODY LENGTH1.490 INCHES MAXIMUM"
ADATBODY WIDTH0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM"
ADAUBODY HEIGHT0.214 INCHES MINIMUM AND 0.224 INCHES MAXIMUM"
AEHXMAXIMUM POWER DISSIPATION RATING1.00 WATTS"
AFGAOPERATING TEMP RANGE-55.0 TO 125.0 DEG CELSIUS"
AFJQSTORAGE TEMP RANGE-65.0 TO 150.0 DEG CELSIUS"
CQSJINCLOSURE MATERIALCERAMIC"
CQSZINCLOSURE CONFIGURATIONDUAL-IN-LINE"
CQWXOUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC"
CTQXCURRENT RATING PER CHARACTERISTIC150.00 MILLIAMPERES MAXIMUM SUPPLY"
CWSGTERMINAL SURFACE TREATMENTSOLDER"
CZENVOLTAGE RATING AND TYPE PER CHARACTERISTIC0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE"
CZEPCAPITANCE RATING PER CHARACTERISTIC150.00 INPUT PICOFARADS MAXIMUM"
CZEQTIME RATING PER CHACTERISTIC35.00 NANOSECONDS MAXIMUM ACCESS"
CZERMEMORY DEVICE TYPERAM"
CZESHYBRID TECHNOLOGY TYPEMONOLITHIC"
TTQYTERMINAL TYPE AND QUANTITY28 PRINTED CIRCUIT"
ADAQBODY LENGTH1.490 INCHES MAXIMUM"
ADATBODY WIDTH0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM"
ADAUBODY HEIGHT0.214 INCHES MINIMUM AND 0.224 INCHES MAXIMUM"
AEHXMAXIMUM POWER DISSIPATION RATING1.00 WATTS"
AFGAOPERATING TEMP RANGE-55.0 TO 125.0 DEG CELSIUS"
AFJQSTORAGE TEMP RANGE-65.0 TO 150.0 DEG CELSIUS"
CQSJINCLOSURE MATERIALCERAMIC"
CQSZINCLOSURE CONFIGURATIONDUAL-IN-LINE"
CQWXOUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC"
CTQXCURRENT RATING PER CHARACTERISTIC150.00 MILLIAMPERES MAXIMUM SUPPLY"
CWSGTERMINAL SURFACE TREATMENTSOLDER"
CZENVOLTAGE RATING AND TYPE PER CHARACTERISTIC0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE"
CZEPCAPITANCE RATING PER CHARACTERISTIC150.00 INPUT PICOFARADS MAXIMUM"
CZEQTIME RATING PER CHACTERISTIC35.00 NANOSECONDS MAXIMUM ACCESS"
CZERMEMORY DEVICE TYPERAM"
CZESHYBRID TECHNOLOGY TYPEMONOLITHIC"
TTQYTERMINAL TYPE AND QUANTITY28 PRINTED CIRCUIT"

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