Thank you for taking an interest in the Microcircuit Linear NSN parts that we carry here on Buy Military Ground Vehicle Parts. You have reached the RFQ page for part number IDT6116SA35TDB, an item that traces back to the manufacturer Integrated Device Technology Inc. Listed with NSN 5962014642421, this listing is available for purchase from our website at any time. If you are interested in part number IDT6116SA35TDB and wish to learn more, be sure to fill out and submit the RFQ form found on this page. By presenting us information such as your target price and expected delivery date, we can best formulate and present a solution that closely caters to your unique needs and restrictions alike.
NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5962-01-464-2421 Item PartTypeName: MICROCIRCUIT,LINEAR | 5962 | 014642421 | 0 | N | B | |
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
U | B | A | 0 | |||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
IDT6116SA35TDB | 5 | 2 | 3 |
MRC | Criteria | Characteristic |
---|---|---|
CXCY | Part Name Assigned By Controlling Agency | 16K ASYNCHRONOUS SPRAM |
TEST | Test Data Document | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
AEHX | Maximum Power Dissipation Rating | 1.0 WATTS |
CBBL | Features Provided | ELECTROSTATIC SENSITIVE AND BURN IN, MIL-STD-883, CLASS B AND HIGH SPEED AND LOW POWER |
MRC | Decoded Requirement | Clear Text Reply |
AGAV | End Item Identification | 6625-01-324-1523 |
CQSJ | Inclosure Material | CERAMIC |
CSSL | Design Function And Quantity | 1 MEMORY, STATIC RAM |
CQSZ | Inclosure Configuration | DUAL-IN-LINE |
AFGA | Operating Temp Range | -55.0/+125.0 DEG CELSIUS |
AFJQ | Storage Temp Range | -65.0/+150.0 DEG CELSIUS |
CZEN | Voltage Rating And Type Per Characteristic | 5.0 VOLTS NOMINAL INPUT |
TTQY | Terminal Type And Quantity | 24 PRINTED CIRCUIT |
CWSG | Terminal Surface Treatment | SOLDER |
CZEQ | Time Rating Per Chacteristic | 35.00 NANOSECONDS AF OUTPUT MEGAWATTS |
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