Thank you for taking an interest in the Microcircuit Memory NSN parts that we carry here on Buy Military Ground Vehicle Parts. You have reached the RFQ page for part number 7920402-05, an item that traces back to the manufacturer Lockheed Martin Corporation. Listed with NSN 5962013683228, this listing is available for purchase from our website at any time. If you are interested in part number 7920402-05 and wish to learn more, be sure to fill out and submit the RFQ form found on this page. By presenting us information such as your target price and expected delivery date, we can best formulate and present a solution that closely caters to your unique needs and restrictions alike.
NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5962-01-368-3228 Item PartTypeName: MICROCIRCUIT,MEMORY | 5962 | 013683228 | 0 | N | B | |
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
7 | B | A | 0 | |||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
7920402-05 | 5 | 2 | 3 |
MRC | Criteria | Characteristic |
---|---|---|
ADAQ | BODY LENGTH | 1.380 INCHES MINIMUM AND 1.485 INCHES MAXIMUM |
ADAU | BODY HEIGHT | 0.030 INCHES MINIMUM AND 0.185 INCHES MAXIMUM |
AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
CQZP | INPUT CIRCUIT PATTERN | 23 INPUT |
CTQX | CURRENT RATING PER CHARACTERISTIC | 100.00 MILLIAMPERES MAXIMUM SUPPLY |
CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | SRAM |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE |
CZEQ | TIME RATING PER CHACTERISTIC | 25.00 NANOSECONDS MAXIMUM ACCESS |
TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS,INDIVIDUAL MANUFACTUREER STANDARDS,ETC.). |
TTQY | TERMINAL TYPE AND QUANTITY | 28 PRINTED CIRCUIT |
AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
ADAT | BODY WIDTH | 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM |
CBBL | FEATURES PROVIDED | BIDIRECTIONAL AND W/ENABLE AND W/DISABLE AND ELECTROSTATIC SENSITIVEBIDIRECTIONAL |
CQSJ | INCLOSURE MATERIAL | CERAMIC |
CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
CZER | MEMORY DEVICE TYPE | RAM |
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