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Thank you for taking an interest in the Microcircuitset NSN parts that we carry here on Buy Military Ground Vehicle Parts. You have reached the RFQ page for part number 10133748, an item that traces back to the manufacturer Nimikkeistokeskus Ncb Finland. Listed with NSN 5962014124785, this listing is available for purchase from our website at any time. If you are interested in part number 10133748 and wish to learn more, be sure to fill out and submit the RFQ form found on this page. By presenting us information such as your target price and expected delivery date, we can best formulate and present a solution that closely caters to your unique needs and restrictions alike.
| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5962-01-412-4785 Item PartTypeName: MICROCIRCUIT SET | 5962 | 014124785 | 0 | N | D | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| 7 | D | A | 0 | |||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| 10133748 | 5 | 9 | 6 |
| MRC | Criteria | Characteristic |
|---|---|---|
| AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS ALL MEMORY" |
| ASDD | COMPONENT FUNCTION RELATIONSHIP | MATCHED" |
| CQSJ | INCLOSURE MATERIAL | CERAMIC ALL MEMORY" |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE ALL MEMORY" |
| CRHL | UNABLE TO DECODE | UNABLE TO DECODE" |
| CSSL | DESIGN FUNCTION AND QUANTITY | 2 MEMORY, ERASABLE PROGRAMMABLE ALL MEMORY" |
| CSWJ | UNABLE TO DECODE | UNABLE TO DECODE" |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER ERR-100 ERR-100" |
| CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | PROGRAMMED CMOS EPROM SET" |
| CZEM | MICROCIRCUIT DEVICE TYPE AND QUANTITY | 2 MEMORY" |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 5.0 VOLTS NOMINAL POWER SOURCE ERR-100" |
| CZEQ | TIME RATING PER CHACTERISTIC | 35.00 NANOSECONDS MAXIMUM DELAY ALL MEMORY" |
| CZER | MEMORY DEVICE TYPE | EPROM ERR-100 ERR-100" |
| TTQY | TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT ALL MEMORY" |
| AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS ALL MEMORY" |
| ASDD | COMPONENT FUNCTION RELATIONSHIP | MATCHED" |
| CQSJ | INCLOSURE MATERIAL | CERAMIC ALL MEMORY" |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE ALL MEMORY" |
| CRHL | UNABLE TO DECODE | UNABLE TO DECODE" |
| CSSL | DESIGN FUNCTION AND QUANTITY | 2 MEMORY, ERASABLE PROGRAMMABLE ALL MEMORY" |
| CSWJ | UNABLE TO DECODE | UNABLE TO DECODE" |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER ERR-100 ERR-100" |
| CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | PROGRAMMED CMOS EPROM SET" |
| CZEM | MICROCIRCUIT DEVICE TYPE AND QUANTITY | 2 MEMORY" |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 5.0 VOLTS NOMINAL POWER SOURCE ERR-100" |
| CZEQ | TIME RATING PER CHACTERISTIC | 35.00 NANOSECONDS MAXIMUM DELAY ALL MEMORY" |
| CZER | MEMORY DEVICE TYPE | EPROM ERR-100 ERR-100" |
| TTQY | TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT ALL MEMORY" |
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