Request a Quote on Philips Semiconductors Ltd Part Number BLW80 with the NSN 5961-01-544-9769 Today!

Part Number: BLW80
NIIN: 015449769
Item Name : Transistor
CAGE Code: 18324
FSG: 59 Electrical and Electronic Equipment Components
Country: USA
NCB Code: 01

Thank you for taking an interest in the Transistor NSN parts that we carry here on Buy Military Ground Vehicle Parts. You have reached the RFQ page for part number BLW80, an item that traces back to the manufacturer Philips Semiconductors Ltd. Listed with NSN 5961015449769, this listing is available for purchase from our website at any time. If you are interested in part number BLW80 and wish to learn more, be sure to fill out and submit the RFQ form found on this page. By presenting us information such as your target price and expected delivery date, we can best formulate and present a solution that closely caters to your unique needs and restrictions alike.

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To make the part searching process as simple as possible, we choose to list offerings with as much relevant information as we can. For example, while part number BLW80 is manufactured by Philips Semiconductors Ltd, it is specifically listed along with CAGE Code 18324. With this identifier, you can trace this item back to the exact facility it was sourced from. Additionally, with the NSN 5961-01-544-9769, this signifies that the product belongs to the Federal Supply Class 5961 Semiconductor Devices and Associated Hardware. Alongside our easy-to-navigate database, we also offer highly competitive pricing and rapid lead times for the benefit of our customers. Get in touch with an industry expert today and see why so many customers steadily depend on us for their operational needs. 

NSN Information for Part Number BLW80 with NSN 5961-01-544-9769, 5961015449769

NSNFSCNIINCLSHazmatDEMILCancelled NSN
5961-01-544-9769

Item PartTypeName:

TRANSISTOR

5961015449769NA
CIICHCCESDPMICCriticalityENAC
AA0
Part NumberISCRNVCRNCCHCCMSDSSADC
BLW80593

Characteristics Data of NSN 5961-01-544-9769, 5961015449769

MRCCriteriaCharacteristic
ABBHINCLOSURE MATERIALCERAMIC
ABHPOVERALL LENGTH27.5 MILLIMETERS NOMINAL
ABMKOVERALL WIDTH7.5 MILLIMETERS NOMINAL
AFZCFUNCTION FOR WHICH DESIGNEDPROGRAMMABLE TRANSISTOR
AGAVEND ITEM IDENTIFICATIONUHF POWER TRANSISTOR
CTQNVOLTAGE RATING IN VOLTS PER CHARACTERISTIC36.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC WITH BASE SHORT-CIRCUITED TO EMITTER AND 17.0 MAXIMUM BASE TO EMITTER VOLTAGE, DC AND 4.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN AND 0.7 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC
CTQXCURRENT RATING PER CHARACTERISTIC1.00 AMPERES SOURCE CUTOFF CURRENT MAXIMUM AND 4.00 MILLIAMPERES ZERO-GATE-VOLTAGE SOURCE CURRENT MINOR
CTRDPOWER RATING PER CHARACTERISTIC17.0 WATTS SMALL-SIGNAL INPUT POWER, COMMON-EMITTER TORR
CTRKTRANSFER RATIO35.0 NOMINAL STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
CTSGMAXIMUM OPERATING TEMP PER MEASUREMENT POINT200.0 DEG CELSIUS JUNCTION
ABBHINCLOSURE MATERIALCERAMIC
ABHPOVERALL LENGTH27.5 MILLIMETERS NOMINAL
ABMKOVERALL WIDTH7.5 MILLIMETERS NOMINAL
AFZCFUNCTION FOR WHICH DESIGNEDPROGRAMMABLE TRANSISTOR
AGAVEND ITEM IDENTIFICATIONUHF POWER TRANSISTOR
CTQNVOLTAGE RATING IN VOLTS PER CHARACTERISTIC36.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC WITH BASE SHORT-CIRCUITED TO EMITTER AND 17.0 MAXIMUM BASE TO EMITTER VOLTAGE, DC AND 4.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN AND 0.7 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC
CTQXCURRENT RATING PER CHARACTERISTIC1.00 AMPERES SOURCE CUTOFF CURRENT MAXIMUM AND 4.00 MILLIAMPERES ZERO-GATE-VOLTAGE SOURCE CURRENT MINOR
CTRDPOWER RATING PER CHARACTERISTIC17.0 WATTS SMALL-SIGNAL INPUT POWER, COMMON-EMITTER TORR
CTRKTRANSFER RATIO35.0 NOMINAL STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
CTSGMAXIMUM OPERATING TEMP PER MEASUREMENT POINT200.0 DEG CELSIUS JUNCTION

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