Request a Quote on Raytheon Company Part Number G111283-312 with the NSN 5962-01-214-5323 Today!

Part Number: G111283-312

Alternate P/N: G111283312

Manufacturer: Raytheon Company

NSN: 5962-01-214-5323

NIIN: 012145323

Item Name : Microcircuit Memory

CAGE Code: 3B150

FSC: 5962 Microcircuits Electronic

FSG: 59 Electrical and Electronic Equipment Components

Country: USA

NCB Code: 01

Thank you for taking an interest in the Microcircuit Memory NSN parts that we carry here on Buy Military Ground Vehicle Parts. You have reached the RFQ page for part number G111283-312, an item that traces back to the manufacturer Raytheon Company. Listed with NSN 5962012145323, this listing is available for purchase from our website at any time. If you are interested in part number G111283-312 and wish to learn more, be sure to fill out and submit the RFQ form found on this page. By presenting us information such as your target price and expected delivery date, we can best formulate and present a solution that closely caters to your unique needs and restrictions alike.

Product Details

“*” Required Fields Are Compulsory

Contact Information

* By clicking this box, I acknowledge that I have read and accept the ASAP Semiconductor Terms and Conditions and agree that all quotes and purchase orders are exclusively subject to the ASAP Semiconductor Customer Terms and Conditions.

I consent to receive email communications from ASAP Semiconductor and can unsubscribe at any time.
ASAP Semiconductor is a wholly independent aftermarket parts distributor.
This website is intended for quotations based on part numbers only. Please DO NOT submit drawings, technical data, or other specifications through this portal.

Disclaimer: This is a quotation for the goods listed above. This quotation is meant as an estimate and does not reflect a final bill or invoice. All quotations are subject to change until acceptance by ASAP Semiconductor of a binding Purchase Order, and quotations may be withdrawn or revised at the sole discretion of ASAP Semiconductor. This quotation is subject to the ASAP Semiconductor Terms & Conditions available at https://www.asapsemi.com/terms-conditions.aspx . All United States Government and Department of Defense bids are quoted as CAGE code 6RE77 from ASAP Semiconductor’s Anaheim, California facility. Any quotation from ASAP Semiconductor without 6RE77 is void.

Note : We Will Not Share Your Information To Any Third Parties.

Upload RFQ SHEET

If you have more than one item, upload your spreadsheet here

Upload File

To make the part searching process as simple as possible, we choose to list offerings with as much relevant information as we can. For example, while part number G111283-312 is manufactured by Raytheon Company, it is specifically listed along with CAGE Code 3B150. With this identifier, you can trace this item back to the exact facility it was sourced from. Additionally, with the NSN 5962-01-214-5323, this signifies that the product belongs to the Federal Supply Class 5962 Microcircuits Electronic. Alongside our easy-to-navigate database, we also offer highly competitive pricing and rapid lead times for the benefit of our customers. Get in touch with an industry expert today and see why so many customers steadily depend on us for their operational needs.

NSN Information for Part Number G111283-312 with NSN 5962-01-214-5323, 5962012145323

NSN	FSC	NIIN	CLS	Hazmat	DEMIL	Cancelled NSN
5962-01-214-5323 Item PartTypeName: MICROCIRCUIT,MEMORY	5962	012145323	0	N	B
	CIIC	HCC	ESD	PMIC	Criticality	ENAC
	U		B	A	0
Part Number	ISC	RNVC	RNCC	HCC	MSDS	SADC
G111283-312	2	2	5

Characteristics Data of NSN 5962-01-214-5323, 5962012145323

MRC	Criteria	Characteristic
ADAQ	BODY LENGTH	1.050 INCHES MINIMUM AND 1.110 INCHES MAXIMUM
ADAT	BODY WIDTH	0.360 INCHES MINIMUM AND 0.410 INCHES MAXIMUM
ADAU	BODY HEIGHT	0.080 INCHES MINIMUM AND 0.140 INCHES MAXIMUM
AFGA	OPERATING TEMP RANGE	-55.0 TO 125.0 DEG CELSIUS
AFJQ	STORAGE TEMP RANGE	-65.0 TO 150.0 DEG CELSIUS
AGAV	END ITEM IDENTIFICATION	RADAR SET AN/FPS-115
CBBL	FEATURES PROVIDED	W/ENABLE AND BIPOLAR AND HIGH IMPEDANCE AND ASYNCHRONOUS AND SYNCHRONOUS AND EDGE TRIGGERED
CQSJ	INCLOSURE MATERIAL	CERAMIC
CQSZ	INCLOSURE CONFIGURATION	DUAL-IN-LINE
CQWX	OUTPUT LOGIC FORM	TRANSISTOR-TRANSISTOR LOGIC
CQZP	INPUT CIRCUIT PATTERN	12 INPUT
CWSG	TERMINAL SURFACE TREATMENT	SOLDER
CZEN	VOLTAGE RATING AND TYPE PER CHARACTERISTIC	-0.5 VOLTS MAXIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
CZEQ	TIME RATING PER CHACTERISTIC	45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,LOW TO HIGH LEVEL OUTPUT AND 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,HIGH TO LOW LEVEL OUTPUT
CZER	MEMORY DEVICE TYPE	ROM
TEST	TEST DATA DOCUMENT	96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS,INDIVIDUAL MANUFACTUREER STANDARDS,ETC.).
TTQY	TERMINAL TYPE AND QUANTITY	22 PRINTED CIRCUIT