Request a Quote on Raytheon Company Part Number G452137-25 with the NSN 5962-01-331-4111 Today!

Part Number: G452137-25

Alternate P/N: G45213725

Manufacturer: Raytheon Company

NSN: 5962-01-331-4111

NIIN: 013314111

Item Name : Microcircuit Memory

CAGE Code: 3B150

FSC: 5962 Microcircuits Electronic

FSG: 59 Electrical and Electronic Equipment Components

Country: USA

NCB Code: 01

Thank you for taking an interest in the Microcircuit Memory NSN parts that we carry here on Buy Military Ground Vehicle Parts. You have reached the RFQ page for part number G452137-25, an item that traces back to the manufacturer Raytheon Company. Listed with NSN 5962013314111, this listing is available for purchase from our website at any time. If you are interested in part number G452137-25 and wish to learn more, be sure to fill out and submit the RFQ form found on this page. By presenting us information such as your target price and expected delivery date, we can best formulate and present a solution that closely caters to your unique needs and restrictions alike.

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To make the part searching process as simple as possible, we choose to list offerings with as much relevant information as we can. For example, while part number G452137-25 is manufactured by Raytheon Company, it is specifically listed along with CAGE Code 3B150. With this identifier, you can trace this item back to the exact facility it was sourced from. Additionally, with the NSN 5962-01-331-4111, this signifies that the product belongs to the Federal Supply Class 5962 Microcircuits Electronic. Alongside our easy-to-navigate database, we also offer highly competitive pricing and rapid lead times for the benefit of our customers. Get in touch with an industry expert today and see why so many customers steadily depend on us for their operational needs.

NSN Information for Part Number G452137-25 with NSN 5962-01-331-4111, 5962013314111

NSN	FSC	NIIN	CLS	Hazmat	DEMIL	Cancelled NSN
5962-01-331-4111 Item PartTypeName: MICROCIRCUIT,MEMORY	5962	013314111	0	N	B
	CIIC	HCC	ESD	PMIC	Criticality	ENAC
	U		B	A	0
Part Number	ISC	RNVC	RNCC	HCC	MSDS	SADC
ROM/PROM FAMILY 013	5	1	5

Characteristics Data of NSN 5962-01-331-4111, 5962013314111

MRC	Criteria	Characteristic
AEHX	MAXIMUM POWER DISSIPATION RATING	739.0 MILLIWATTS
AFGA	OPERATING TEMP RANGE	-55.0 TO 125.0 DEG CELSIUS
AFJQ	STORAGE TEMP RANGE	-65.0 TO 150.0 DEG CELSIUS
CBBL	FEATURES PROVIDED	BIPOLAR AND SCHOTTKY AND PROGRAMMABLE AND MONOLITHIC AND 3-STATE OUTPUT AND HIGH IMPEDANCE
CTFT	CASE OUTLINE SOURCE AND DESIGNATOR	D-2 MIL-M-38510
TEST	TEST DATA DOCUMENT	96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS,INDIVIDUAL MANUFACTUREER STANDARDS,ETC.).
CQSZ	INCLOSURE CONFIGURATION	DUAL-IN-LINE
CQZP	INPUT CIRCUIT PATTERN	6 INPUT
CZER	MEMORY DEVICE TYPE	PROM
ABKW	OVERALL HEIGHT	0.400 INCHES MAXIMUM
ADAT	BODY WIDTH	0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CQWX	OUTPUT LOGIC FORM	TRANSISTOR-TRANSISTOR LOGIC
CWSG	TERMINAL SURFACE TREATMENT	SOLDER
CZEN	VOLTAGE RATING AND TYPE PER CHARACTERISTIC	7.0 VOLTS MAXIMUM POWER SOURCE
ADAQ	BODY LENGTH	0.840 INCHES MAXIMUM
ADAU	BODY HEIGHT	0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
CQSJ	INCLOSURE MATERIAL	CERAMIC
CZEQ	TIME RATING PER CHACTERISTIC	80.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,LOW TO HIGH LEVEL OUTPUT AND 80.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,HIGH TO LOW LEVEL OUTPUT
TTQY	TERMINAL TYPE AND QUANTITY	16 PRINTED CIRCUIT