AS9120B, ISO 9001:2015, and FAA AC 0056B Accredited
Thank you for taking an interest in the Microcircuit Memory NSN parts that we carry here on Buy Military Ground Vehicle Parts. You have reached the RFQ page for part number G339253-1, an item that traces back to the manufacturer Raytheon Company. Listed with NSN 5962014511934, this listing is available for purchase from our website at any time. If you are interested in part number G339253-1 and wish to learn more, be sure to fill out and submit the RFQ form found on this page. By presenting us information such as your target price and expected delivery date, we can best formulate and present a solution that closely caters to your unique needs and restrictions alike.
| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5962-01-451-1934 Item PartTypeName: MICROCIRCUIT,MEMORY | 5962 | 014511934 | 0 | N | D | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| 7 | D | A | 0 | |||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| G339253-1 | 5 | 1 | 5 |
| MRC | Criteria | Characteristic |
|---|---|---|
| AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS |
| AGAV | END ITEM IDENTIFICATION | MILSTAR E/I FSCM 49956 |
| CBBL | FEATURES PROVIDED | 3-STATE OUTPUT AND ELECTROSTATIC SENSITIVE |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| CRTL | CRITICALITY CODE JUSTIFICATION | CBBL |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 5.0 VOLTS NOMINAL INPUT |
| CZER | MEMORY DEVICE TYPE | PROGRAMMED |
| CZZZ | MEMORY CAPACITY | 2K WORD X 8 BIT |
| NHCF | NUCLEAR HARDNESS CRITICAL FEATURE | HARDENED |
| TTQY | TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT |
| AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS |
| AGAV | END ITEM IDENTIFICATION | MILSTAR E/I FSCM 49956 |
| CBBL | FEATURES PROVIDED | 3-STATE OUTPUT AND ELECTROSTATIC SENSITIVE |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| CRTL | CRITICALITY CODE JUSTIFICATION | CBBL |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 5.0 VOLTS NOMINAL INPUT |
| CZER | MEMORY DEVICE TYPE | PROGRAMMED |
| CZZZ | MEMORY CAPACITY | 2K WORD X 8 BIT |
| NHCF | NUCLEAR HARDNESS CRITICAL FEATURE | HARDENED |
| TTQY | TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT |
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