Request a Quote on Samsung Semiconductor Inc Part Number K6T1008C2EDB7000 with the NSN 5962-01-408-2869 Today!

Part Number: K6T1008C2EDB7000

Manufacturer: Samsung Semiconductor Inc

NSN: 5962-01-408-2869

NIIN: 014082869

Item Name : Microcircuit Memory

CAGE Code: 0DUN9

FSC: 5962 Microcircuits Electronic

FSG: 59 Electrical and Electronic Equipment Components

Country: USA

NCB Code: 01

Thank you for taking an interest in the Microcircuit Memory NSN parts that we carry here on Buy Military Ground Vehicle Parts. You have reached the RFQ page for part number K6T1008C2EDB7000, an item that traces back to the manufacturer Samsung Semiconductor Inc. Listed with NSN 5962014082869, this listing is available for purchase from our website at any time. If you are interested in part number K6T1008C2EDB7000 and wish to learn more, be sure to fill out and submit the RFQ form found on this page. By presenting us information such as your target price and expected delivery date, we can best formulate and present a solution that closely caters to your unique needs and restrictions alike.

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To make the part searching process as simple as possible, we choose to list offerings with as much relevant information as we can. For example, while part number K6T1008C2EDB7000 is manufactured by Samsung Semiconductor Inc, it is specifically listed along with CAGE Code 0DUN9. With this identifier, you can trace this item back to the exact facility it was sourced from. Additionally, with the NSN 5962-01-408-2869, this signifies that the product belongs to the Federal Supply Class 5962 Microcircuits Electronic. Alongside our easy-to-navigate database, we also offer highly competitive pricing and rapid lead times for the benefit of our customers. Get in touch with an industry expert today and see why so many customers steadily depend on us for their operational needs.

NSN Information for Part Number K6T1008C2EDB7000 with NSN 5962-01-408-2869, 5962014082869

NSN	FSC	NIIN	CLS	Hazmat	DEMIL	Cancelled NSN
5962-01-408-2869 Item PartTypeName: MICROCIRCUIT,MEMORY	5962	014082869		N	B
	CIIC	HCC	ESD	PMIC	Criticality	ENAC
			B	A	0
Part Number	ISC	RNVC	RNCC	HCC	MSDS	SADC
UPD431000ACZ-70L	5	2	5

Characteristics Data of NSN 5962-01-408-2869, 5962014082869

MRC	Criteria	Characteristic
AEHX	MAXIMUM POWER DISSIPATION RATING	1.0 WATTS"
AFGA	OPERATING TEMP RANGE	+0.0 TO 70.0 DEG CELSIUS"
AFJQ	STORAGE TEMP RANGE	-55.0 TO 125.0 DEG CELSIUS"
AGAV	END ITEM IDENTIFICATION	REMOTE TERMINAL UNIT, WLB-RTU (1 TO 10)"
CBBL	FEATURES PROVIDED	3-STATE OUTPUT"
CQSJ	INCLOSURE MATERIAL	PLASTIC"
CQSZ	INCLOSURE CONFIGURATION	DUAL-IN-LINE"
CQZP	INPUT CIRCUIT PATTERN	8 INPUT"
CXCY	PART NAME ASSIGNED BY CONTROLLING AGENCY	CMOS STATIC RAM"
CZEN	VOLTAGE RATING AND TYPE PER CHARACTERISTIC	4.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE"
CZER	MEMORY DEVICE TYPE	RAM"
FEAT	SPECIAL FEATURES	128K-WORD X 8-BIT CAPACITY; 70 NS ACCESS TIME; DIRECT TTL COMPATIBILITY; BATTERY BACK-UP OPERATION CAPABILITY"
TTQY	TERMINAL TYPE AND QUANTITY	32 FLAT LEADS"
AEHX	MAXIMUM POWER DISSIPATION RATING	1.0 WATTS"
AFGA	OPERATING TEMP RANGE	+0.0 TO 70.0 DEG CELSIUS"
AFJQ	STORAGE TEMP RANGE	-55.0 TO 125.0 DEG CELSIUS"
AGAV	END ITEM IDENTIFICATION	REMOTE TERMINAL UNIT, WLB-RTU (1 TO 10)"
CBBL	FEATURES PROVIDED	3-STATE OUTPUT"
CQSJ	INCLOSURE MATERIAL	PLASTIC"
CQSZ	INCLOSURE CONFIGURATION	DUAL-IN-LINE"
CQZP	INPUT CIRCUIT PATTERN	8 INPUT"
CXCY	PART NAME ASSIGNED BY CONTROLLING AGENCY	CMOS STATIC RAM"
CZEN	VOLTAGE RATING AND TYPE PER CHARACTERISTIC	4.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE"
CZER	MEMORY DEVICE TYPE	RAM"
FEAT	SPECIAL FEATURES	128K-WORD X 8-BIT CAPACITY; 70 NS ACCESS TIME; DIRECT TTL COMPATIBILITY; BATTERY BACK-UP OPERATION CAPABILITY"
TTQY	TERMINAL TYPE AND QUANTITY	32 FLAT LEADS"